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1---wave-shapinq ncbrork - Abstract:This paper describes what is believed to be the first successful design and fabrication of a broadband monolithic high efficiency class-E driver amplifier that operates at X-band and employs a 0.3 um x 600 um pHEMT device. The amplifier's measured performance shows a peak Power Added Efficiency (PAE) of 63% at 10.6 GHz and a constant output power of greater than 24 dBm together with a gain of 10 dl3 over 9-1 1 GHz. c i Rlad I. Introduction Low cost, highly efficient, high power, microwave and RF amplifiers are required for many commercial, as well as defense system, applications. These include wireless LANs, wireless cable broadcast transmitters, cellular phones, and telecommunication systems, as well as advanced airborne active phased array radar systems. The majority of these applications are very cost driven, and therefore the choice of technology, design methodology, and manufacturing cycle time are the major cost contributors and should be contained.

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