A GaAs acoustic sensor with frequency output based on resonant tunneling diodes

Zhang, Binzhen; Wang, Jian; Chen, Xue; Zhang, Wendong; Xiong, Jijun

doi:10.1016/j.sna.2006.11.011

Cited by 15 publications

(3 citation statements)

References 11 publications

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“…For the past few decades, resonant tunneling diodes (RTDs) have become an engrossing topic of research due to their wide range of applications in both analog and digital circuits [1][2][3][4][5]. Mostly, different types of heterostructures were used to make these RTDs [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Antidote-induced armchair graphene nanoribbon based resonant tunneling diodes

Hossain¹,

Rahaman²,

Alam³

2021

Semicond. Sci. Technol.

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Resonant tunneling phenomena are explored using armchair graphene nanoribbon (AGNR), which eliminates the lattice mismatch and electron mobility degradation problems of conventional heterostructure resonant tunneling diodes (RTDs). Eight antidote topologies are proposed in this paper. These antidote topologies significantly increase or decrease the band gap of AGNR. Both double barrier quantum well and single barrier quantum well structures have been achieved by putting the antidote-induced AGNRs and pristine AGNRs. A numerical approach with a tight binding model and non-equilibrium Green's function formalism has been used to simulate the quantum phenomena of the device. Current-voltage characteristics of these proposed RTDs show a high peak to valley ratio and low power dissipation with respect to different antidote topologies. Channel length variation effects are investigated in the proposed RTDs, and it is found that the peak to valley ratio, valley current, valley voltage, and power dissipation can be improved by tuning the channel length. These graphene-based RTDs are easy to fabricate and offer more flexibility in terms of peak to valley ratio, valley current, valley voltage, and power dissipation.

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Section: Introductionmentioning

confidence: 99%

Antidote-induced armchair graphene nanoribbon based resonant tunneling diodes

Hossain¹,

Rahaman²,

Alam³

2021

Semicond. Sci. Technol.

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“…The micromachined gyroscope is an inertial sensor to measure the angular velocity and angular displacement, which has the advantages of small size, light weight, high reliability [1,2], and having great potential in the fields of military and civilian areas. Resonant tunneling diodes (RTD) is one of the most prospective device in the current nano-electronics field [3], which is a negative resistance device based on tunneling effect of resonant tunneling film, with the advantages of small size, light weight, high reliability, low voltage low power consumption, etc [4,5]. The mesopiezoresistance theory shows that [6,7,8]: the tunneling current of resonant tunneling thin films will be changed when a mechanical signal is applied, that is the I-V characteristic curve will be changed in graphics.…”

Section: Introductionmentioning

confidence: 99%

The Design and Testing of Mesopiezoresistive Effect Electromagnetic Driven Micromachined Gyroscope

Wang

Shi

et al. 2010

AMR

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Resonant tunneling diode (RTD) is a bipolar negative resistance device with the features of high speed, high frequency, low voltage and power, has been proved to have mesopiezoresistive effect, and the current-voltage characteristics of RTD is a function of stress. In the paper, the mesopiezoresistive effect of resonant tunneling diodes and Coriollis effect are both used in the research of gyroscope, so a novel gyroscope structure is proposed. The feasible fabrication process is designed according to present process technology, and the gyroscope is fabricated by GaAs surface micromachining processes and bulk micromachining technology. By the driven experiment it is verify that the gyroscope can be successfully driven. And the range of fabricated gyroscope natural frequency is also obtained, which is larger than 4KHz.

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“…Furthermore, the current-voltage characteristics of the RTD are very sensitive to the stress [4,5], and the piezoresistive sensitivity of RTD is one order higher than that of silicon piezoresistor [6]. Therefore, the RTD has been widely applied in the field of microelectromechanical devices for developing high performance micromachined sensors [7,8].…”

Section: Introductionmentioning

confidence: 99%