A Fully-Integrated 77-GHz FMCW Radar Transceiver in 65-nm CMOS Technology

Lee, Jri; Li, Yi-An; Hung, Mei-Chuan; Huang, Shih-Jou

doi:10.1109/jssc.2010.2075250

Cited by 288 publications

(112 citation statements)

References 26 publications

Supporting

Mentioning

108

Contrasting

Unclassified

Order By: Relevance

“…However, L 1 and L 2 are calculated from Eqs. (3,4) to be 19 and 14 pH, respectively. These series inductances correspond to reactance as small as 6 Ω and 4.4 Ω at 50 GHz, and thus they can be neglected in the first order.…”

Section: Design Of Output Matching Networkmentioning

confidence: 99%

See 1 more Smart Citation

A Transformer-Matched Millimeter-Wave CMOS Power Amplifier

Park¹,

Jeon²

2016

JSTS:Journal of Semiconductor Technology and Science

View full text Add to dashboard Cite

Abstract-A differential power amplifier operating at millimeter-wave frequencies is demonstrated using a 65-nm CMOS technology. All of the input, output, and inter-stage network are implemented by transformers only, enabling impedance matching with low loss and a wide bandwidth. The millimeter-wave power amplifier exhibits measured small-signal gain exceeding 12.6 dB over a 3-dB bandwidth from 45 to 56 GHz. The output power and PAE are 13 dBm and 11.7%, respectively at 50 GHz.

show abstract

Section: Design Of Output Matching Networkmentioning

confidence: 99%

“…As the gate width scales down deeply, the single-chip solution becomes feasible even at millimeter-wave (mm-wave) frequencies [3,4]. Nonetheless, a CMOS power amplifier (PA) is still one of the most challenging blocks to integrate on the singlechip transceivers because of low breakdown voltage and high passive-component loss.…”

Section: Introductionmentioning

confidence: 99%

A Transformer-Matched Millimeter-Wave CMOS Power Amplifier

Park¹,

Jeon²

2016

JSTS:Journal of Semiconductor Technology and Science

View full text Add to dashboard Cite

show abstract

“…Sachs [5] has written extensively on a M-sequence radar using SiGe BiCMOS technology. A growing application is automotive radars in the 60/70 GHz bands, where multiple single-chip solutions have been presented and some are commercially available [6], CMOS realizations in the literature include [7][8][9][10]. Several short-range radar systems are reported [11][12][13] indicating a number of potential sensing applications provided a compact, low-power, and highperformance radar is available; preferably in low-cost standard technology.…”

Section: Introductionmentioning

confidence: 99%

Bitstream radar waveforms for generic single-chip radar

Bjorndal

Hamran

Lande

2017

Int. J. Microw. Wireless Technol.

View full text Add to dashboard Cite

Bitstreams, square wave digital signals, enable flexible radar implementations in modern digital technology. By using bitstreams in place of analog sinusoidal waveforms, we can realize continuous-wave (CW), stepped-frequency CW, frequencymodulated CW, or even pseudo random noise-sequence and pulsed radars, all with a single bit of amplitude resolution. The building blocks are a programable waveform generator, a sweep threshold quantizer, digital delay, and a digital XOR gate as a mixer. This gives us a novel, almost fully digital (requiring only a comparator) system, as previously proposed and which is extended here. The flexibility of the transmitter allows for easy switching between waveforms and the bitstream signal can be processed with single-bit digital gates. Single-bit signals allows for exploration of novel continuous time non-clocked digital implementations to maximize speed and energy efficiency. Mixing frequencies with a digital XOR gate creates harmonics, which are explored for multiple solutions utilizing digital delay. Analytical as well as simulation results are presented. Initial measurements from a 90 nm CMOS chip is provided for the transmitter and the full system, proving the feasibility of a digital future in radar.Keywords: Radar architecture and systems, Si-based devices and IC technologies I . I N T R O D U C T I O NModern digital technology bring miniaturization, low-power consumption, substantial computational power, and integration of complex processing on a small piece of silicon (system-on-chip). For modern radar systems, the full advantage of modern technology has been difficult to utilize in spite of faster devices and higher computational speed. As indicated in [1] modern radar systems are still fairly large modules with substantial size and power consumption.The basic principles of radar have been known for more than a century, over the years several radar architectures have been explored; each with its own tradeoff in application and hardware complexity. Radar architectures differ mainly by the utilized waveform, example architectures contains, continuous-wave (CW) radar for velocity determination, pulsed ranging radar, frequency-modulated continuous-wave (FMCW) radar, stepped-frequency continuous-wave (SFCW) radar, and noise radar. The frequency-modulated architectures need a frequency source and a mixer, but require only a modest sampling rate of the mixer difference. The pulsed and noise radars are more amendable to digital implementation, but require a receiver that samples the entire transmitted bandwidth.Several integrated radar systems have appeared in the literature, some with commercial interest. The first single-chip complementary metal-oxide-semiconductor (CMOS) radar was published by Hjortland et al. [2] in 2006, featuring a pulsed radar system now commercially available from Novelda [3]. Later an integrated SFCW radar was reported in 65 nm CMOS by Caruso [4] for breast cancer detection. Sachs [5] has written extensively on a M-sequence radar using SiGe BiCMOS techn...

show abstract

“…Scalable and advanced CMOS technologies demonstrate low-cost, highintegration, and good-reliability potentials which make digital, analog, and radio-frequency (RF) circuitry in a single chip realistic [1][2][3][4][5]. However, significant losses of CMOS inductors resulting from its lowresistivity substrate limit their system applications and integrations at radio frequencies [6,7].…”

Section: Introductionmentioning

confidence: 99%

Design of Low-Loss and Highly-Selective Cmos Active Bandpass Filter at K-Band

Wang

Huang²

2012

PIER

View full text Add to dashboard Cite

Abstract-In this paper, a second-order Chebyshev active bandpass filter (BPF) with three finite transmission zeros is presented. The filter utilizes a tapped-inductor feedback technique to compensate resistive losses of on-chip inductors, and a shunt-feedback inductor between input and output ports to achieve the transmission zeros. Moreover, one transmission zero is in the lower stopband, and two transmission zeros are in the upper stopband, thus improving the selectivity of the filter significantly. The filter is designed and fabricated in a standard 0.18-µm CMOS technology with a chip area of 0.57 mm × 0.65 mm including all testing pads. The circuit draws 6 mA from a 0.7-V supply voltage. Additionally, the filter achieves a 1.65-dB insertion loss and 13.2-dB return loss with a 17% 3-dB bandwidth at 23.5 GHz. The measured NF and input P 1 dB is 6.7 dB and −3.5 dBm. The rejection levels at the transmission zeros are greater than 15.2 dB. Finally, the large-signal characterizations are also investigated by the 1-dB compression point (P 1 dB ) of the filter.

show abstract

A Fully-Integrated 77-GHz FMCW Radar Transceiver in 65-nm CMOS Technology

Cited by 288 publications

References 26 publications

A Transformer-Matched Millimeter-Wave CMOS Power Amplifier

A Transformer-Matched Millimeter-Wave CMOS Power Amplifier

Bitstream radar waveforms for generic single-chip radar

Design of Low-Loss and Highly-Selective Cmos Active Bandpass Filter at K-Band

Contact Info

Product

Resources

About