A fully integrated 4.8-6 GHz power amplifier with on-chip output balun in 38 GHz-f/sub T/ Si-bipolar

Bakalski, W.; Simbürger, W.; Thuringer, R.; Wohlmuth, H.-D.; Scholtz, Arpad L.

doi:10.1109/mwsym.2003.1212467

Cited by 7 publications

(2 citation statements)

References 8 publications

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“…Alternatively, integrated transformers can be used as balun at the input and output of a push-pull stage providing impedance transformation at the same time. The feasibility of such topologies is shown in [3] and [4]. In an earlier work of the authors [5], the application of integrated transformers as power combiners of several push-pull stages has been analyzed.…”

Section: Introductionmentioning

confidence: 99%

Fully Integrated 5.8 GHz SiGe Power Amplifier

Grüner¹,

Gustat

Boeck³

2008

2008 38th European Microwave Conference

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A fully integrated broadband push-pull power amplifier (PA) has been developed and fabricated in a 0.25 µm SiGe-HBT technology. Monolithic transformers are used to transform the 50 Ω input/output of the amplifier to the optimum load and source impedances of an efficient push-pull pair. Electromagnetic modeling of the whole chip structure has been carried out in order to optimize the performance of the presented PA. It achieves an output power of 20/23 dBm in saturation and 18/21 dBm at 1 dB power compression at a supply voltage of 1.2/1.8 V and a center frequency of 5.8 GHz. The maximum PAE is 18/20 %. A gain of (9.7±1) dB was observed over a wide frequency range from 4 GHz up to 6.4 GHz.

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Section: Introductionmentioning

confidence: 99%

Fully Integrated 5.8 GHz SiGe Power Amplifier

Grüner¹,

Gustat

Boeck³

2008

2008 38th European Microwave Conference

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“…Since the second stage will need to be biased at higher levels than the first stage and the power gain of the CB configuration is ∼7 dB higher than the CE configuration, we adopted CB for the second stage. In order to obtain better virtual RF ground for the CB configuration, differential topology and on-chip baluns were used [2,18,19] for the second stage. Impedance matching for the CB stage was also achieved with the baluns.…”

Section: Design Of a Sige Hbt Pamentioning

confidence: 99%

Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier

Qin

Jiang

Seo

et al. 2010

Semicond. Sci. Technol.

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The performance of a SiGe heterojunction bipolar transistor (HBT) millimetre-wave power amplifier (PA) operating at cryogenic temperature was reported and analysed for the first time. A 24 GHz two-stage medium PA employing common-emitter and common-base SiGe power HBTs in the first and the second stage, respectively, showed a significant power gain increase at 77 K in comparison with that measured at room temperature. Detailed analyses indicate that cryogenic operation of SiGe HBT-based PAs mainly affects (improves) the performance of the SiGe HBTs in the circuits due to transconductance enhancement through magnified, favourable changes of SiGe bandgap due to cooling ( E g /kT) and minimized thermal effects, with little influence on the passive components of the circuits.

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