A Fully Integrated 240-GHz Direct-Conversion Quadrature Transmitter and Receiver Chipset in SiGe Technology

Sarmah, Neelanjan; Grzyb, Janusz; Statnikov, Konstantin; Malz, Stefan; Vazquez, Pedro Rodriguez; Foerster, W.; Heinemann, B.; Pfeiffer, Ullrich R.

doi:10.1109/tmtt.2015.2504930

Cited by 138 publications

(41 citation statements)

References 24 publications

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“…13) provided on-board from a sawtooth frequency-ramp generator. The output signal from the multiplier-chain after 3-dB split and power amplification by two four-stage PAs with small-signal gain of 14 dB and P sat of 7 dBm [129] drives both the transmitter input of the circularly polarized antenna and the fundamentally operated Gilbert-cell based downconversion mixer. The RF port of the mixer is preceded by a three-stage power amplifier instead of regular LNA for improved bandwidth and linearity [42].…”

Section: Fmcw Radar Imagingmentioning

confidence: 99%

Terahertz Imaging and Sensing Applications With Silicon-Based Technologies

Hillger

Grzyb

Jain

et al. 2019

IEEE Trans. THz Sci. Technol.

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288

108

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Traditional terahertz (THz) equipment faces major obstacles in providing the system cost and compactness necessary for widespread deployment of THz applications. Because of this, the field of THz integrated circuit (THz IC) design in CMOS and SiGe HBT technologies has surged in the last decade. An interplay of advances in silicon process technology, design technique, and microelectronic packaging promises to narrow the gap between the requirements and the reality of system cost and performance of THz components. Furthermore, the scalability, reconfigurability, and signal processing features of silicon technology have initiated research in complex THz ICs that expand the functionality of THz systems; this has enabled new applications, methods, and algorithms. This paper reviews the progress in THz IC research and investigates several realizations of THz imaging and sensing applications with silicon-based components regarding their motivation, system performance, and challenges. THz computed tomography, broadband multicolor imaging, high-resolution FMCW radar imaging, subwavelength resolution near-field imaging, and compressed sensing are presented.

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Section: Fmcw Radar Imagingmentioning

confidence: 99%

Terahertz Imaging and Sensing Applications With Silicon-Based Technologies

Hillger

Grzyb

Jain

et al. 2019

IEEE Trans. THz Sci. Technol.

Self Cite

288

108

View full text Add to dashboard Cite

show abstract

“…Even for the same silicon integrated circuit, the architecture of 300 GHz band transmitter differs according to f max . In the SiGe integrated circuit, as in the usual transceiver, as shown in Figure 2a, a power amplifier can be used for a 300 GHz band transmitter [11,12]. On the other hand, in CMOS integrated circuits, power amplifiers normally included in transceivers are not available.…”

Section: Ghz Band Transmitter Using Silicon Integrated Circuitmentioning

confidence: 99%

“…As shown in Figure 8a, the receiver of the SiGe integrated circuit can use a low-noise amplifier [11,12]. Furthermore, in recent receivers of SiGe integrated circuits, by using a 300 GHz band driver amplifier as an LO signal, it is possible to improve the conversion gain of the fundamental mixer and to remove the low-noise amplifier.…”

Section: Ghz Band Receiver Using Silicon Integrated Circuitmentioning

confidence: 99%

Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

Fujishima

2018

Photonics

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In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date. Terahertz communication using the 300 GHz band has nonetheless attracted attention based on the expectation that an unallocated frequency band exceeding 275 GHz can be used for communication in the future. Research into wireless transceivers using BiCMOS integrated circuits with silicon germanium transistors and advanced miniaturized CMOS integrated circuits has increased in this 300 GHz band. In this paper, we will outline the terahertz communication technology using silicon integrated circuits available from mass production, and discuss its applications and future.

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“…At this frequency band, the LNA does not provide a NF good enough to justify the limitation in RF BW that the circuit introduces [12][13][14]. The RF signal is fed directly to the mixer by a wideband lens-integrated wire-ring on-chip antenna [12], which illuminates a 9-mm diameter silicon-lens placed on the Si chip rear side. The quadrature mixer consists of two double-balanced switching-quads that down-convert the RF signal.…”

Section: Receiver Architecturementioning

confidence: 99%

A 219–266 GHz LO-tunable direct-conversion IQ receiver module in a SiGe HBT technology

Vazquez

Grzyb

Sarmah

et al. 2018

Int. J. Microw. Wireless Technol.

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This paper presents a fully-integrated direct-conversion fundamentally-operated mixer-first quadrature receiver module with a tunable LO in the 219–266 GHz band. It has been implemented in a 0.13-μm SiGe heterojunction bipolar transistor technology. It includes an on-chip LO path driven externally from the printed circuit board (PCB) connector level at 13.6–16.7 GHz. A hybrid coupler generates the quadrature LO signal, which drives a pair of double-balanced fundamentally-operated down-conversion mixers, whose RF ports are connected to a wideband lens-integrated on-chip ring antenna. The chip-on-lens assembly is placed in the recess of a high-speed PCB and wire-bonded. To compensate the inductive behavior of the wire-bond interconnection between the chip and the PCB at the high-speed IF outputs, an on-board 8-section step-impedance low-pass filter has been implemented. The module shows a 47 GHz 3-dB radio frequency/local oscillator operation bandwidth (BW), a peak conversion gain of 7.8 dB, a single-side-band noise figure of 11.3 dB, and a 3-dB IF BW of 13 GHz. The in-phase and quadrature amplitude imbalance stays below 1.58 dB for the 210–280 GHz band. The down-conversion and the baseband stages consume together 75.5 mW, while the LO path 378 mW. The maximum data-rate achieved with this receiver in combination with the transmitter presented in [1–3] is 60 Gbps for quadrature phase shift keying modulation.

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A Fully Integrated 240-GHz Direct-Conversion Quadrature Transmitter and Receiver Chipset in SiGe Technology

Cited by 138 publications

References 24 publications

Terahertz Imaging and Sensing Applications With Silicon-Based Technologies

Terahertz Imaging and Sensing Applications With Silicon-Based Technologies

Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

A 219–266 GHz LO-tunable direct-conversion IQ receiver module in a SiGe HBT technology

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