2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS) 2019
DOI: 10.1109/icecs46596.2019.8965105
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A full functional Monolithic Active Pixel Sensor prototype for the CEPC vertex detector

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Cited by 4 publications
(3 citation statements)
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“…In the primary design, the readout time of a pixel address is 50 ns for the pixel array of 512 × 1024. Since a pixel pitch less than 25 µm is expected, the pixel design only keeps the key parts in ALPIDE and FEI3, and the pixel details can be found in [7]. In order to satisfy the dead time, all the 512 DCOLs in the pixel array are parallel read out.…”
Section: Design Overviewmentioning
confidence: 99%
“…In the primary design, the readout time of a pixel address is 50 ns for the pixel array of 512 × 1024. Since a pixel pitch less than 25 µm is expected, the pixel design only keeps the key parts in ALPIDE and FEI3, and the pixel details can be found in [7]. In order to satisfy the dead time, all the 512 DCOLs in the pixel array are parallel read out.…”
Section: Design Overviewmentioning
confidence: 99%
“…It has been implemented in a 0.18 µm CMOS Image Sensor (CIS) process. It includes a 192 × 64 matrix with a pixel size of 25 × 25 µm 2 [4]. Regarding the previous pixel sensor prototypes for the CEPC vertex detector, the TaichuPix1 is the first to satisfy both pixel size and readout speed.…”
Section: Jinst 16 P09020mentioning
confidence: 99%
“…the same peripheral readout logic was implemented at the end of the column. More details about the readout architecture can be found in [4].…”
Section: Jinst 16 P09020mentioning
confidence: 99%