A front-side dry-etched thermopile detector with 3&amp;#x2013;5 &amp;#x03BC;m infrared absorber and its application to novel NDIR CO&lt;inf&gt;2&lt;/inf&gt; gas sensors

Yoo, Ki‐Pung; Kwon, Kwang‐Ho; Min, Nam Ki; Kim, Si-Dong; Choi, Woo-Seok

doi:10.1109/icsens.2008.4716585

Cited by 6 publications

(6 citation statements)

References 5 publications

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“…This results in the enhancement of device performance as the metallic nanoparticles also play an active role in gas detection [30]. (iii) Additionally, the excited species (ions) within the plasma interact with the nanotube surface, breaking the C-C bonds and creating active sites for the bonding of functional groups [31].…”

Section: Oxygen Plasma Etchmentioning

confidence: 99%

MWCNT–polymer composites as highly sensitive and selective room temperature gas sensors

Mangu

Rajaputra

Singh³

2011

Nanotechnology

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Multi-walled carbon nanotubes (MWCNTs)-polymer composite-based hybrid sensors were fabricated and integrated into a resistive sensor design for gas sensing applications. Thin films of MWCNTs were grown onto Si/SiO(2) substrates via xylene pyrolysis using the chemical vapor deposition technique. Polymers like PEDOT:PSS and polyaniline (PANI) mixed with various solvents like DMSO, DMF, 2-propanol and ethylene glycol were used to synthesize the composite films. These sensors exhibited excellent response and selectivity at room temperature when exposed to low concentrations (100 ppm) of analyte gases like NH(3) and NO(2). The effect of various solvents on the sensor response imparting selectivity to CNT-polymer nanocomposites was investigated extensively. Sensitivities as high as 28% were observed for an MWCNT-PEDOT:PSS composite sensor when exposed to 100 ppm of NH(3) and - 29.8% sensitivity for an MWCNT-PANI composite sensor to 100 ppm of NO(2) when DMSO was used as a solvent. Additionally, the sensors exhibited good reversibility.

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Section: Oxygen Plasma Etchmentioning

confidence: 99%

MWCNT–polymer composites as highly sensitive and selective room temperature gas sensors

Mangu

Rajaputra

Singh³

2011

Nanotechnology

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“…Nowadays, complementary metal-oxide semiconductor (CMOS) compatible micromachined thermopile infrared (IR) detectors are used in many different applications such as the spectrometer [1], gas sensor [2] and remote temperature sensor [3]. This is due to the inherent advantages of the micromachined thermopile IR detectors, including insensitivity to ambient temperature, broad spectral response and ease of operation.…”

Section: Introductionmentioning

confidence: 99%

“…XeF 2 dry etching, therefore, has been used for the fabrication of a micromachined sensor [3,12,13]. Recently, micromachined thermopiles with XeF 2 etching have been reported [2,3,14]. However, thus far, there have been few reports on the integrated micromachined thermopile with the XeF 2 dry-etching process.…”

Section: Introductionmentioning

confidence: 99%

Integrated micromachined thermopile IR detectors with an XeF₂dry-etching process

Xiong

Wang

et al. 2009

J. Micromech. Microeng.

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Based on the Seebeck effect, the CMOS compatible micromachined thermopile is widely used in infrared detection for its advantages of low-cost, high batch yield, broad spectral response and insensitivity to ambient temperature. We present two integrated thermopile IR detectors on stacked dielectric layers realized by a standard P-well CMOS technology, followed by one CMOS compatible maskless XeF2 isotropic dry-etching step. Characterizations of CMOS devices, before and after XeF2 etching, respectively, were performed to investigate the effects of XeF2 etching on the CMOS devices. With a 2.5 µm thick stacked silicon oxide–nitride–oxide layer as an absorber, the rectangular thermopile detector and the circular thermopile detector provided responsivity of 14.14 and 10.26 V W−1, specific detectivity of 4.15 × 107 and 4.54 × 107 cm Hz1/2 W−1, and time constant of 23.7 and 14.6 ms, respectively. Compared with the rectangular thermopile detector, the circular thermopile detector is mechanically more stable, because its circular structure design eases the internal stress problem in the CMOS layers. After XeF2 etching, the maximum changes of threshold voltage, maximum transconductance and switching threshold voltage were 0.97%, 1.25% and 0.08%, respectively. Experimental results show that the effects of XeF2 etching on the CMOS devices are insignificant, and XeF2 etching is suitable for post-CMOS micromachining.

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“…Thermopiles in the format of single detector have been used as non-contact temperature sensors, flow sensors, gas sensors, accelerometers and AC-DC converters, while thermopile array devices have been demonstrated as infrared (IR) imaging devices and microspectrometers [11][12][13][14][15][16][17][18][19][20][21][22][23]. 3 Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Development of a thermopile infrared sensor using stacked double polycrystalline silicon layers based on the CMOS process

Zhou

Kropelnicki

Tsai

et al. 2013

J. Micromech. Microeng.

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A front-side dry-etched thermopile detector with 3–5 μm infrared absorber and its application to novel NDIR CO<inf>2</inf> gas sensors

Cited by 6 publications

References 5 publications

MWCNT–polymer composites as highly sensitive and selective room temperature gas sensors

MWCNT–polymer composites as highly sensitive and selective room temperature gas sensors

Integrated micromachined thermopile IR detectors with an XeF₂dry-etching process

Development of a thermopile infrared sensor using stacked double polycrystalline silicon layers based on the CMOS process

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A front-side dry-etched thermopile detector with 3&#x2013;5 &#x03BC;m infrared absorber and its application to novel NDIR CO<inf>2</inf> gas sensors

Cited by 6 publications

References 5 publications

MWCNT–polymer composites as highly sensitive and selective room temperature gas sensors

MWCNT–polymer composites as highly sensitive and selective room temperature gas sensors

Integrated micromachined thermopile IR detectors with an XeF2dry-etching process

Development of a thermopile infrared sensor using stacked double polycrystalline silicon layers based on the CMOS process

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A front-side dry-etched thermopile detector with 3–5 μm infrared absorber and its application to novel NDIR CO<inf>2</inf> gas sensors

Integrated micromachined thermopile IR detectors with an XeF₂dry-etching process