2006
DOI: 10.1109/tns.2006.881096
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A Front-End Readout for Micro Bolometers Having Sub Nano Volt Noise Floor

Abstract: We present our circuit solution for the second stage of the front-end readout of an array of -bolometers, cryogenic detectors having Si or Ge thermistor as sensing element. The front-end consists in a cold unity gain buffer stage (with single sided input connection) followed by a room temperature second differential amplifying stage. The optimization of the input transistor of the set-up has been determined by comparing the performances obtained applying a low pass filter or the optimum filter at output of the… Show more

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Cited by 8 publications
(4 citation statements)
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“…In this case, bandwidth was 60 MHz, limiting the peaking time to about 6 ns, as in figure 11, but noise was not optimized for spectroscopy. To measure energy spectra, another amplifier was used with very low noise and high gain, designed in our laboratory for a bolometric application [16]. Input series noise from this amplifier was less than 0.5 nV/ √ Hz, making its contribution negligible compared with noise from the cold JFET and from the line terminating resistor R T .…”
Section: The New Readout Scheme For Ionization Detectorsmentioning
confidence: 99%
“…In this case, bandwidth was 60 MHz, limiting the peaking time to about 6 ns, as in figure 11, but noise was not optimized for spectroscopy. To measure energy spectra, another amplifier was used with very low noise and high gain, designed in our laboratory for a bolometric application [16]. Input series noise from this amplifier was less than 0.5 nV/ √ Hz, making its contribution negligible compared with noise from the cold JFET and from the line terminating resistor R T .…”
Section: The New Readout Scheme For Ionization Detectorsmentioning
confidence: 99%
“…For each bolometer, the detector signal is readout from a cold buffer stage composed of a SNJ450 Si-JFET from Interfet in unity gain follower configuration, the Si-JFET being held at its optimum temperature of operation, around 130 K. The parasitic capacitance C PB at the JFET input is of the order of 15 pF. The signal at the source of the Si-JFET is read at room temperature by the very low noise single sided input preamplifier [5,6], amp-signal. The connecting cables from the cold to the warm stage contribute with about 200 pF of parasitic capacitance C PF .…”
Section: System Set-upmentioning
confidence: 99%
“…Figure 2 shows the measured noise distribution of the cold FET buffer stage at some selected frequencies. The source of the cold buffer stage is readout from the very low noise preamplifier [2]. Low noise in the preamplifier stage (noted as PA in Fig.…”
Section: Front-endmentioning
confidence: 99%