A Frequency-Multiplied Source With More Than 1 mW of Power Across the 840–900-GHz Band

Maestrini, A.; Ward, J.; Gill, John; Lee, Choonsup; Thomas, B.; Lin, Robert; Chattopadhyay, Goutam; Mehdi, Imran

doi:10.1109/tmtt.2010.2050171

Cited by 114 publications

(59 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…It is notable that the four anodes (#2, #3, #6 and #7), which receive less input power than the other four anodes (#1, #4, #5, #8) do actually produce more power at the output frequency. This reversal has been also observed by the other researchers [22], and no reasonable explanation has been given. The detailed investigation will be implemented in the subsequent research.…”

Section: Simulationsmentioning

confidence: 53%

Design and Characterization of a W-Band Power-Combined Frequency Tripler for High-Power and Broadband Operation

Chen¹,

Xu²

2013

PIER

View full text Add to dashboard Cite

Abstract-We report on the design, simulation and characterization of a solid-state W-band in-phase power-combined frequency tripler. In order to increase the output power of the frequency tripler without sacrificing efficiency and bandwidth, two mirror-image tripler circuits with four UMS R Schottky varistor diode chips are designed and mounted in a waveguide block, which includes a compact double-probe power divider at the input waveguide and a Y-junction power combiner at the output waveguide, respectively. Each circuit chip features four anodes on a 50 mil thick Rogers RT/duroid 5880 substrate. The tripler has 1.2 ∼ 3.8% conversion efficiency measured across the 75 ∼ 110 GHz band when driven with 24 dBm of input power at room temperature. With the input power of 27 dBm, 5.5 ∼ 11 dBm of saturated output power is produced over 75 ∼ 110 GHz. Suppression of undesired harmonics is greater than 17 dB.

show abstract

Section: Simulationsmentioning

confidence: 53%

Design and Characterization of a W-Band Power-Combined Frequency Tripler for High-Power and Broadband Operation

Chen¹,

Xu²

2013

PIER

View full text Add to dashboard Cite

show abstract

“…Again CMOS will be very difficult to compete at THz frequencies where existing InP technologies have been able to deliver well over 1mW across the entire 840-900 GHz band [7]. At the lower frequencies, CMOS again runs into challenging competition as GaN technology enters into the picture, where power amplifiers can easily deliver one-third-watt (25dBm) power at frequencies beyond 75 GHz and with power-addedefficiencies of well over 10%.…”

Section: B Thz Cmos For Space Instrument Transmitters?mentioning

confidence: 99%

CMOS (Sub)-mm-Wave System-on-Chip for exploration of deep space and outer planetary systems

Tang

Chang

Chattopadhyay

et al. 2014

Proceedings of the IEEE 2014 Custom Integrated Circuits Conference

View full text Add to dashboard Cite

this paper discusses the applicability of CMOS (sub)-mm-Wave System-on-Chips in space explorations of the solar system, especially planetary missions. Specifically assessed are issues related to high levels of radiation encountered in deep space. To exemplify the type of technology infusion that is possible, we specifically feature the incorporation of a previously developed "self-healing" 12/48 GHz CMOS frequency synthesizer into a current planetary sub-mm-wave (or Terahertz) heterodyne receiver instrument (PISSARRO) for the substantial benefit of payload size, area and weight reduction.

show abstract

“…Due to the commercial availability of solid-state high power sources in W-band and the current difficulties in implementing solid-state amplifiers above this frequency range, it is a common option to use a W-band high power source to drive a multiplier chain to form a solid-state THz signal generator [6,7,8]. Therefore, the first multiplier is one of the key components in the chain as it is required to handle high input power so as to produce sufficient output power to drive the subsequent multipliers in the chain.…”

Section: Introductionmentioning

confidence: 99%

190 GHz high power input frequency doubler based on Schottky diodes and AlN substrate

Chen

Wang

Alderman

et al. 2016

IEICE Electron. Express

View full text Add to dashboard Cite

This paper presents the design and development of a 190 GHz Schottky-diode frequency doubler (×2 multiplier) which can handle up to 260 mW input power. In order to increase the power handling capability, a modeling approach incorporating computer-aided design (CAD) load-pull techniques to characterize the diode performance is proposed. By the use of this approach, effects of several critical diode parameters on the power handling issue are quantitatively investigated and based on the analysis, a discrete diode chip is designed for the doubler. To ensure rapid heat sink in the doubler circuitry, low cost aluminum nitride ceramic (AlN) is selected as the dielectric material of the circuit substrate, which has significantly better thermal conductivity compared with currently widely-used fused quartz. The doubler circuitry is based on a balanced configuration, which brings a merit of avoiding the use of a filter for the input and output signal isolation. The doubler circuit is optimized by co-simulation using ANSYS's HFSS and Keysight's ADS. The measurements show that the doubler can handle up to 260 mW input power with a power conversion efficiency of nearly 8%, resulting in 20 mW output power at 193 GHz.

show abstract

A Frequency-Multiplied Source With More Than 1 mW of Power Across the 840–900-GHz Band

Cited by 114 publications

References 30 publications

Design and Characterization of a W-Band Power-Combined Frequency Tripler for High-Power and Broadband Operation

Design and Characterization of a W-Band Power-Combined Frequency Tripler for High-Power and Broadband Operation

CMOS (Sub)-mm-Wave System-on-Chip for exploration of deep space and outer planetary systems

190 GHz high power input frequency doubler based on Schottky diodes and AlN substrate

Contact Info

Product

Resources

About