A floating gate negative capacitance MoS<sub>2</sub> phototransistor with high photosensitivity

Nur, Roda; Tsuchiya, Takashi; Toprasertpong, Kasidit; Terabe, Kazuya; Takagi, Shinichi; Takenaka, Mitsuru

doi:10.1039/d1nr06315d

Cited by 13 publications

(7 citation statements)

References 43 publications

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“…Benefiting from the special device structure of two back‐to‐back metal–semiconductor contacts, the strong suppression of two barriers contributed to the ultralow dark current (1.8 fA at 0 V and 4.9 pA at 1 V), which could promise their extended applications in the field of weak light signal detection. [ 52 ] On the other hand, the sub‐bandgap states of surface defects would enhance the absorption of MAPbBr 3 nanoplates within NIR and SWIR regions and potentially promote the infrared response of NPDs. [ 33 ] The suppressed dark current and high photocurrent of the as‐prepared MAPbBr 3 NPDs would result in large linear dynamic range (LDR), external quantum efficiency (EQE), responsivity, and specific detectivity, as described in detail as follows.…”

Section: Resultsmentioning

confidence: 99%

Ultraviolet‐Visible‐Short‐Wavelength Infrared Broadband and Fast‐Response Photodetectors Enabled by Individual Monocrystalline Perovskite Nanoplate

Mei

Zhang

Cui

et al. 2023

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Perovskite‐based photodetectors exhibit potential applications in communication, neuromorphic chips, and biomedical imaging due to their outstanding photoelectric properties and facile manufacturability. However, few of perovskite‐based photodetectors focus on ultraviolet‐visible‐short‐wavelength infrared (UV–Vis–SWIR) broadband photodetection because of the relatively large bandgap. Moreover, such broadband photodetectors with individual nanocrystal channel featuring monolithic integration with functional electronic/optical components have hardly been explored. Herein, an individual monocrystalline MAPbBr3 nanoplate‐based photodetector is demonstrated that simultaneously achieves efficient UV–Vis–SWIR detection and fast‐response. Nanoplate photodetectors (NPDs) are prepared by assembling single nanoplate on adjacent gold electrodes. NPDs exhibit high external quantum efficiency (EQE) and detectivity of 1200% and 5.37 × 1012 Jones, as well as fast response with rise time of 80 µs. Notably, NPDs simultaneously achieve high EQE and fast response, exceeding most perovskite devices with multi‐nanocrystal channel. Benefiting from the high specific surface area of nanoplate with surface‐trap‐assisted absorption, NPDs achieve high performance in the near‐infrared and SWIR spectral region of 850–1450 nm. Unencapsulated devices show outstanding UV‐laser‐irradiation endurance and decent periodicity and repeatability after 29‐day‐storage in atmospheric environment. Finally, imaging applications are demonstrated. This work verifies the potential of perovskite‐based broadband photodetection, and stimulates the monolithic integration of various perovskite‐based devices.

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Section: Resultsmentioning

confidence: 99%

Ultraviolet‐Visible‐Short‐Wavelength Infrared Broadband and Fast‐Response Photodetectors Enabled by Individual Monocrystalline Perovskite Nanoplate

Mei

Zhang

Cui

et al. 2023

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“…This research provides a new avenue for high-speed, robust and adaptive processing of future optoelectronic neural systems. The MoS2 phototransistor proposed by Nur et al [ 98 ] can mimic the functions of the retinal synapse by converting light spikes into electronic signals. The basic synaptic plasticity behaviors, such as PPF, is attributed to the persistent photoconductivity (PPC) effect of MoS 2 .…”

Section: Basic Principles Of Device Structures and Neuromorphic Behav...mentioning

confidence: 99%

Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks

Zhang

Huang

Jiang

2023

Science and Technology of Advanced Materials

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The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption for the current explosion of data. Brain-inspired neuromorphic computing can break the inherent limitations of traditional computers. Neuromorphic devices are the key hardware units of neuromorphic chips to implement the intelligent computing. In recent years, the development of optogenetics and photosensitive materials has provided new avenues for the research of neuromorphic devices. The emerging optoelectronic neuromorphic devices have received a lot of attentions because they have shown great potential in the field of visual bionics. In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. The basic principle of bio-vision formation is first introduced. Then the device structures and operating mechanisms of optoelectronic memristors and transistors are discussed. Most importantly, the recent progresses of optoelectronic synaptic devices based on various photosensitive materials in the fields of visual perception are described. Finally, the problems and challenges of optoelectronic neuromorphic devices are summarized, and the future development of visual bionics is also proposed.

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“…[130] Optoelectronic synapse-like devices mainly rely on optical signals or optical and electrical combination signals to perform synaptic functionality simulation, [131,132] which can be used to develop neuromorphic visual systems. [133] Optoelectronic synapse (it actually binds one photoreceptor neuron) can simultaneously detect and memorize optical signals. [134,135] The introduction of light stimulation extends external stimulation beyond electricity, providing another degree of freedom for controlling device performance, and opens up new possibilities for multi-gate neuromorphic structures.…”

Section: Ambipolar 2d Semiconductors For Optoelectronic Synapsesmentioning

confidence: 99%

Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics

Zhao 赵,

Sun 孙,

Sheng 盛

et al. 2023

Chinese Phys. B

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In these days, the increasing massive data is being produced and demanded to be processed with the rapid growth of information technology. It is difficult to rely solely on the shrinking of semiconductor devices and scale-up of the integrated circuits (ICs) again in the foreseeable future. Exploring new materials, new-principle semiconductor devices and new computing architectures is becoming an urgent topic in this field. Ambipolar two-dimensional (2D) semiconductors, possessing excellent electrostatic field controllability and flexibly modulated major charge carriers, offer a possibility to construct reconfigurable devices and enable the ICs with new functions, showing great potential in computing capacity, energy efficiency, time delay and cost. This review focuses on the recent significant advancements on reconfigurable electronic and optoelectronic devices of ambipolar 2D semiconductors, and demonstrates their potential approach towards ICs, like reconfigurable circuits and neuromorphic chips. It is expected to help readers to understand the device design principle of ambipolar 2D semiconductors, and push forwards exploring more new-principle devices and new-architecture computing circuits, and even their product applications.

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A floating gate negative capacitance MoS₂ phototransistor with high photosensitivity

Abstract: Monolayer MoS2 exhibits interesting optoelectronic properties that have been utilized in applications such as photodetectors and light emitting diodes. For image sensing applications, improving the light sensitivity relies on achieving...

Cited by 13 publications

References 43 publications

Ultraviolet‐Visible‐Short‐Wavelength Infrared Broadband and Fast‐Response Photodetectors Enabled by Individual Monocrystalline Perovskite Nanoplate

Ultraviolet‐Visible‐Short‐Wavelength Infrared Broadband and Fast‐Response Photodetectors Enabled by Individual Monocrystalline Perovskite Nanoplate

Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks

Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics

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A floating gate negative capacitance MoS2 phototransistor with high photosensitivity

Abstract: Monolayer MoS2 exhibits interesting optoelectronic properties that have been utilized in applications such as photodetectors and light emitting diodes. For image sensing applications, improving the light sensitivity relies on achieving...

Cited by 13 publications

References 43 publications

Ultraviolet‐Visible‐Short‐Wavelength Infrared Broadband and Fast‐Response Photodetectors Enabled by Individual Monocrystalline Perovskite Nanoplate

Ultraviolet‐Visible‐Short‐Wavelength Infrared Broadband and Fast‐Response Photodetectors Enabled by Individual Monocrystalline Perovskite Nanoplate

Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks

Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics

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A floating gate negative capacitance MoS₂ phototransistor with high photosensitivity