A floating dummy trench gate IGBT (FDT-IGBT) for hybrid and electric vehicle (HEV/EV) applications

Zhu, Cancan; Deviny, Ian; Dai, Xiaoping; Luo, Hailin; Xiao, Qiang; Ning, Xubin; Xiao, Haibo; Liu, Guoyou

doi:10.23919/epe17ecceeurope.2017.8099106

Cited by 8 publications

(3 citation statements)

References 3 publications

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“…However, with the increasing numbers of gate trench, the area facing the collector side will also increase correspondingly, which cause large Miller capacitance and slow down the switching speed. To cope with this issue, the concepts of dummy trench (DT) and the improved floating DT structure were proposed [52, 54]. The redundant DTs are connected to the emitter side, which can optimise the trade‐off performance between on‐state voltage drop and short‐circuit robustness.…”

Section: Technology Trend For More Reliable Power Semiconductors Ofmentioning

confidence: 99%

Recent advances and trend of HEV/EV‐oriented power semiconductors – an overview

Liu¹,

Wang

et al. 2020

IET Power Electronics

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This study introduces the development advances and trend of power semiconductors used in hybrid and electric vehicles (HEV/EV). The status and forecast of power electronics' requirement in HEV/EV are discussed along with a review of the automotive standard of power semiconductor devices. The advances in automotive semiconductor technologies such as Sibased insulated-gate bipolar transistor (IGBT) and freewheeling diode (FRD) and SiC-based metal oxide semiconductor fieldeffect transistor (MOSFET) and Schottky barrier diode are presented. The advances in automotive semiconductor packaging technologies are illustrated from three considerations, which are the low inductance in high-power density packaging, lower thermal resistance designing, and advanced packaging technologies. The challenges and development trend of more reliable power semiconductors for HEV/EV are discussed. The challenges in Si devices are focused on power density, efficiency, reliability, and packages, while the high temperature and low inductances are the main challenges for SiC devices. Lastly, the development trend is discussed in terms of four aspects, the new generation Si IGBT for HEV/EV, such as recessed-emittertrench, reverse-conduction-IGBT, and smart IGBT; next generation SiC MOSFET; new packaging technology and material, such as planar packaging.

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Section: Technology Trend For More Reliable Power Semiconductors Ofmentioning

confidence: 99%

Recent advances and trend of HEV/EV‐oriented power semiconductors – an overview

Liu¹,

Wang

et al. 2020

IET Power Electronics

Self Cite

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“…First of all, the bottom-top current, ICE, flows as bottom-top bias, VC, applies to IGBT discrete device. Due to the development of certain fitting skills [11,12], many results are so inspiring and conclusive, including nanometer-scale process limit, the thickness of strong inversion layer, and threshold voltage size-associated trend. In the sense, IGBT characteristic curves are worth fitting by using a brand-new modified formula with three parameters, i.e., the size and mobility related keff, threshold voltage related Vth, and Early Voltage related  as presented in Equation ( 1) and (2).…”

Section: Introductionmentioning

confidence: 99%

Promising Algorithm Addressing the Mechanism and Charac-teristic Curves of Insulated Gated Bipolar Transistor (IGBT)

Yang,

Chi,

Yang

et al. 2024

Preprint

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Insulated Gate Bipolar Transistor (IGBT) may convey high current and sustain high breakdown voltages; it may provide high power control. In a sense, how IGBT demonstrates the capability of power control was not specifically described, and the equivalent bipolar junction transistors (BJT) activated by an applied bias to the insulated gate is intriguing. As seen in Figure 1, IGBT shows an equivalent circuit structure containing two types of BJT, (NPN-type Bipolar transistor and PNP-type Bipolar transistor), which can be modeled as diode-associated transistor. Apparently, as a bias applies to the controlling gate, the channel beneath the gate oxide gets strongly inversed and turns out to be conductive just like what happens on metal-oxide-silicon field effect transistor (MOSFET), which provides necessary igniting currents to both BJTs and thus causes high current gain flowing through them-selves from the bottom. A proposed and renewed formula provides addressing the above scenario and successfully fitting the measured data that forms the characteristic curves. Some parameters in the proposed formula, which includes size and mobility associated constant, threshold voltage, and Early-Voltage-related lambda for MOSFET, explain and explore the underlying physics. IGBT thus enjoy high input impedance and high current gain due to MOSFET (Insulated Gate) and BJT, respectively. This formula combines both merits of MOSFET and BJT in order to fit the measured data. Indeed, the formula intimately fits IGBT electrical characteristic curves, and thus may be qualified and served as a model. The new model is then advisable for designing power integrated circuit to exactly achieve power saving, power control, and power efficiency.

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“…Combining advantages of the bipolar junction transistor and metal-oxide-semiconductor field effect transistor (MOSFET), IGBT demonstrates excellent device performance in both static and dynamic states [1][2][3]. In the last few decades, improved IGBT structures with various leading-edge technologies, such as field stop (FS) [4][5][6], floating-P (FP) [7,8], split gate [9,10], dual gate [11], etc have been proposed and put into market. Although better device performance can be achieved for the trench gate IGBT with reduced junction field effect transistor (JFET) effect, the planar gate IGBT (PIGBT) is still preferred in the high voltage applications since it has lower switching loss, lower saturated collector current density (J sat ) and higher reliability.…”

Section: Introductionmentioning

confidence: 99%

Dual injection enhanced planar gate IGBT with self-adaptive hole path for better trade-off and higher SOA capability

Zhang¹,

Huang²,

Liu³

et al. 2022

Semicond. Sci. Technol.

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A novel dual injection enhanced planar gate IGBT with self-adaptive hole path (DIE-PIGBT) is proposed. A floating-P region is applied behind the emitter-connected deep trench in z direction and contacted with the N-type carrier stored (N-CS) layer for the proposed IGBT. Compared to the conventional trench shielded planar gate IGBT (CTS-PIGBT), the proposed device further alleviates the negative impact of the N-CS layer on the breakdown voltage (BV) and reduces both the on-state voltage drop (Vceon) and saturated collector current density (Jsat). Simulation results show that with the same device thickness of 400μm, the BV are 4625V and 4275V for the proposed and conventional device, respectively. The Vceon at 75A/cm2 is 2.51V for the proposed DIE-PIGBT, which is 1.13V lower than that of the CTS-PIGBT. Furthermore, with similar BV to the conventional one, the device thickness can be reduced to 355μm for the DIE-PIGBT. Pro. The total gate charge (QG) and miller plateau charge (QGC) for the proposed device are reduced by 61.0% and 89.9%, respectively. As a result, the proposed structure has better trade-off relationship between the Vceon and turn-off loss (Eoff). At the same Vceon of 2.51V, the Eoff for the DIE-PIGBT and DIE-PIGBT. Pro are 45.17mJ/cm2 and 41.01 mJ/cm2, which is reduced by 44.0% and 49.1% when compared to 80.61mJ/cm2 of the CTS-PIGBT, respectively. Moreover, the Jsat is reduced from 619A/cm2 for the CTS-PIGBT to 368A/cm2 for the DIE-PIGBT under the Vge of 15V. The short-circuit withstand time of the DIE-PIGBT is 1.9 times larger than that of the conventional device.

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A floating dummy trench gate IGBT (FDT-IGBT) for hybrid and electric vehicle (HEV/EV) applications

Cited by 8 publications

References 3 publications

Recent advances and trend of HEV/EV‐oriented power semiconductors – an overview

Recent advances and trend of HEV/EV‐oriented power semiconductors – an overview

Promising Algorithm Addressing the Mechanism and Charac-teristic Curves of Insulated Gated Bipolar Transistor (IGBT)

Dual injection enhanced planar gate IGBT with self-adaptive hole path for better trade-off and higher SOA capability

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