A Flip-Chip-Assembled W-Band Receiver in 90-nm CMOS and IPD Technologies

Li, Chun-Hsing; Hsieh, Wan-Ting; Chiu, Te-Yen

doi:10.1109/tmtt.2019.2894426

Cited by 18 publications

(6 citation statements)

References 29 publications

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“…In an RX design, it is a commonly used method to provide the off-chip LO signal. 7,8 The usage of the off-chip LO sources will greatly reduce the difficulty of the RX design and introduce less risk to the circuit. Although the LO signal is fed off-chip, the LO-driven amplifiers and single-to-differential converters are also needed on-chip.…”

Section: Double-balanced Passive Mixers and Lo Signal Chainsmentioning

confidence: 99%

“…In an RX design, it is a commonly used method to provide the off‐chip LO signal 7,8 . The usage of the off‐chip LO sources will greatly reduce the difficulty of the RX design and introduce less risk to the circuit.…”

Section: Design Considerationsmentioning

confidence: 99%

“…Owing to the increasing demand for high integration and low cost, the complementary metal-oxide-semiconductor (CMOS) technology is advantageous over compound semiconductors technologies. [8][9][10][11] Furthermore, the maximum operating frequency of 28-nm CMOS technology is beyond 200 GHz, which is suitable for W-band wireless systems. Many CMOS RXs have been discussed in previous research.…”

Section: Introductionmentioning

confidence: 99%

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A 90‐ to 115‐GHz superheterodyne receiver front‐end for W‐band imaging system in 28‐nm complementary metal‐oxide‐semiconductor

Wei

Zhang

et al. 2022

Circuit Theory & Apps

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In this paper, a broadband superheterodyne receiver (RX) front-end for millimeter-wave (mm-Wave) imaging radar is presented. Realized in 28-nm CMOS technology, the proposed RX incorporates a wideband low-noise amplifier (LNA), double-balanced passive mixers for the dual down-conversion, a differential power divider, a differential intermediate frequency filters, a current-mode-logic divider-by-2, and a local oscillator buffers. Wideband technique and layout optimization are taken into consideration in the RX. A fourstage LNA is devised to realize the high gain and low noise figure (NF) with a common-gate input stage and three pseudodifferential common-source stages.Optimized transistor layout and capacitor neutralization technique are developed to improve gain and noise performance. Transformer-based matching networks with the peak-staggered technique are adopted in the LNA to achieve a flatter gain response with a wider bandwidth (BW). The passive double-balanced mixers are implemented with a highly symmetrical layout for broadband down-conversion. Simulation results show that the mm-Wave RX front-end exhibits a BW ranging from 90 to 115 GHz. The simulated NF of our RX is 4.7 dB at 86 GHz. With a supply voltage of 1 V, the presented RX consumes 88.2-mW power and occupies a chip size of 1.6 Â 0.5 mm 2 including all the testing pads. The proposed RX is suitable for W-band imaging systems.

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Section: Double-balanced Passive Mixers and Lo Signal Chainsmentioning

confidence: 99%

Section: Design Considerationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A 90‐ to 115‐GHz superheterodyne receiver front‐end for W‐band imaging system in 28‐nm complementary metal‐oxide‐semiconductor

Wei

Zhang

et al. 2022

Circuit Theory & Apps

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“…2(b). Nickel-gold (Ni-Au) bumps with thickness of 8 µm are used to bond the CMOS chip to the IPD antenna array using an Au-Au thermo-compressive flip-chip bonding technique [32]. The incoming signal can be captured by the antenna array and is then transferred to the input of the CMOS power detector through the THz interconnect.…”

Section: Heterogeneously-integrated Thz Imager Designmentioning

confidence: 99%

340-GHz Heterogeneously-Integrated THz Imager With 4°-Beamwidth 16×16 IPD Antenna Array for Lensless Terahertz Imaging Applications

Chiu

2021

IEEE Access

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A low-cost and planar heterogeneously-integrated 340-GHz THz imager is proposed for lensless THz imaging applications. The proposed THz imager is composed of a 16 × 16 antenna array realized in an integrated-passive-device (IPD) technology, an IPD-to-CMOS THz interconnect, and a power detector implemented in a 0.18-µm CMOS technology. The 16×16 IPD antenna array can provide simulated antenna gain of 23.9 dBi, antenna directivity of 30 dB, and half-power beamwidth (HPBW) of 5.6 • at 340 GHz. The proposed THz interconnect utilizes a transmission line coupling technique to provide low-loss and broadband signal transition from a CMOS chip to an IPD one while occupying a small chip area. The simulated insertion loss of the THz interconnect is only 1.8 dB at 340 GHz while providing 3-dB bandwidth from 230 to 446 GHz. The power detector exploits the transistor's inherent even-order nonlinearity to rectify the input signal for power detection. The power detector can give simulated voltage responsivity R V and noise equivalent power (NEP) of 190.2 kV/W and 1.9 nW/Hz 0.5 at 340 GHz, respectively, as the chopping frequency f mod is 1 kHz. A nonlinear curve fit technique is proposed to tackle the undesired fluctuation of the measured output voltage due to a standing-wave effect. Experimental results show that the proposed heterogeneously-integrated THz imager can provide measured effective R V and NEP of 0.967 MV/W and 0.18 nW/Hz 0.5 at 328 GHz, respectively, as f mod is 1 kHz. The measured antenna directivity and HPBW can be 30 dB and 4 • at 340 GHz, respectively. Such a THz imager with advantages of high antenna directivity and narrow HPBW can be employed to realize a simple, low-cost, and lensless THz imaging system. To the best of the authors' knowledge, the proposed THz imager integrates the highest number of antennas and exhibits the highest antenna directivity and the narrowest HPBW at THz frequencies reported thus far.

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“…Compared with the bond-wire scheme, the flip-chip packaging is preferred for its advantage of less interconnect parasitic effect in the mmWave band [20], [21]. To compensate the capacitive behavior caused by the overlaps in the transition structure, a passive compensation network is still needed.…”

Section: Flip-chip Interconnection Designmentioning

confidence: 99%

A 1 × 2 Taper Slot Antenna Array With Flip-Chip Interconnect via Glass-IPD Technology for 60 GHz Radar Sensors

Xia

Zhang

et al. 2020

IEEE Access

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A low cost, broadband and compact antenna in package solution (AiP) is proposed for 60 GHz low-power radar sensor applications. Following a glass integrated passive device (Glass-IPD) manufacturing process, a compact low cost taper slot antenna (TSA) is designed on a substrate with a thickness beyond Yngvesson's range. To realize high gain and front-to-back ratio, the antenna is optimized by introducing a truncated ground. A 1 × 2 antenna array prototype is realized with a dummy transmission line chip in the dimension of 5 × 7.4 mm 2. Including the flip chip interconnect, the measured results demonstrate a 10 dB impedance bandwidth of 47.2 ∼ 67 GHz. The calculated gain is higher than 6.5 dBi in the end-fire direction over the entire 60 GHz band. Based on a physical RLC equivalent circuit, by co-design of the antenna with solder balls, the flip chip interconnect is compensated with a passive network. For the compensation network, its working bandwidth is from 0.1 to 67 GHz, while its insertion loss at 60 GHz is less than 0.2 dB. INDEX TERMS 60 GHz, antenna in package (AiP), CPW-slotline transition, flip-chip, glass integrated passive device (Glass-IPD), radar sensors, taper slot antenna (TSA).

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A Flip-Chip-Assembled W-Band Receiver in 90-nm CMOS and IPD Technologies

Cited by 18 publications

References 29 publications

A 90‐ to 115‐GHz superheterodyne receiver front‐end for W‐band imaging system in 28‐nm complementary metal‐oxide‐semiconductor

A 90‐ to 115‐GHz superheterodyne receiver front‐end for W‐band imaging system in 28‐nm complementary metal‐oxide‐semiconductor

340-GHz Heterogeneously-Integrated THz Imager With 4°-Beamwidth 16×16 IPD Antenna Array for Lensless Terahertz Imaging Applications

A 1 × 2 Taper Slot Antenna Array With Flip-Chip Interconnect via Glass-IPD Technology for 60 GHz Radar Sensors

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