A flat gain GaN MMIC power amplifier for X band application

Abstract

A flat gain two-stage MMIC power amplifier with a 2.8 GHz bandwidth is successfully developed for X band frequency application based on a fully integrated micro-strip AlGaN/GaN HEMT technology on a semi-insulating SiC substrate. Designed with a binary-cluster matching structure integrated with RC networks and LRC networks, the developed power MMIC gets a very flat small signal gain of 15 dB with a gain ripple of 0.35 dB over 9.1–11.9 GHz at the drain bias of 20 V. These RC networks are very easy to improve the stability of used GaN HEMTs with tolerance to the MMIC technology. Inside the frequency range of 9–11.2 GHz where the measurement system calibrated, the amplifier delivers a pulsed output power of 39 dBm and an associated power added efficiency of about 20% at 28 V without saturation, as the available RF power is limited.

Long‐time coherent accumulation algorithm based on acceleration blind estimation

“…The technology to extend the radar seeker range has drawn wide attention from domestic and foreign scholars, in order to improve the detection ability of the radar seeker for the air defence missile to the stealth aircraft. On the hardware side, the major measures include improving antenna efficiency, reducing the noise coefficient of the receiver [8], increasing the peak power of transmitter [9–14], improving the duty cycle and so on; with the rapid development of microelectronics, precision machining, and other industries, these measures have got good returns. On the software side, the studies are focused on how to prolong the time of coherent accumulation to improve the sensibility of the seeker.…”