Microstrip Radial Stub Based 4W GaN MMIC Power Amplifier for X-band Radar Applications

Vardhan, Sri Harsha; Pathak, Deepali; Ramalingam, Raja; Mehnde, Manish; Dutta, Ashudeb

doi:10.1109/icaect49130.2021.9392405

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Design of a broadband GaN 12 W power amplifier

Fan

Mou

2023

Micro & Optical Tech Letters

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A compact broadband 12 W power amplifier with broadband matching networks is presented. Transistors connected in parallel are used to synthesize the high power. Input, interstage, and output matching networks are also properly designed to meet the requirement of the broadband application. The broadband high power amplifier (HPA) was fabricated using a 0.15‐μm gallium nitride (GaN) HEMT technology, with a maximum saturated measured output power of 43 dBm from 6 to 18 GHz. The measured power added efficiency exceeds 20% in the whole interested band. The proposed HPA also has a compact size of 3.1 mm × 2.96 mm.

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