A first uncooled (25 to 85°C) 43-Gbps lightsource based on InGaAlAs EA/DFB laser technology

High-speed electroabsorption modulator integrated DFB laser for 40 Gbps and 100 Gbps application

“…Practical modulation amplitude below 2.5 V was used for each measurement condition. And average chip output power was 2.9 dBm at 85ºC [23,24]. These characteristics are obtained by both the low-RC-time constant of EA modulator and individually optimized design of each functional element.…”

Improvement in electrostatic-discharge tolerance of 1.3µm AlGaInAs/InP buried heterostructure laser diodes

“…These LDs have higher potential in high temperature and high speed operations than GaInAsP/InP LDs. [1][2][3][4] However, as far as we know, there was few reports on reliability of AlGaInAs/InP LDs, although reliability is an important issue as well as LD characteristics. We previously reported high long-term reliability (estimated lifetime of 240000h) of AlGaInAs/InP buried heterostructure (BH) Fabry-Perot LDs.…”

25 Gbit/s 1.3 [micro sign]m InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system

“…So far, 25 Gbit/s, 10 km transmission [2], 43 Gbit/s, 10 km transmission [3] based on InGaAlAs-based EADFBs, and 25 Gbit/s, 30 km transmission at 358C [4] based on InGaAsP-based EADFB have been demonstrated. Although these results show the usefulness of 1.3 mm EADFBs for metro-area 100GbE, a bit error rate (BER) evaluation and 40 km transmission on SMF required for 100GBASE-ER4 have not been reported.…”

“…To obtain a large ER, we used InGaAlAs multiple-quantum-wells (MQW) for the EA section since this material provides large conduction band offset compared with InGaAsP MQW. For MQW with large conduction band offset, the confinement of electrons in the well layer is stronger under the bias voltage for the EA modulator (EAM), leading to an increased overlap of wavefunctions and thus effective absorption of light [2,3,5,6]. Also, the value of strain in the well layer is optimised and tensile-strained MQWs are employed to obtain a large ER [5,6].…”