25 Gbit/s 1.3 [micro sign]m InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system

Fujisawa, Takeshi; Arai, M.; Fujiwara, Naoki; Kobayashi, Wataru; Tadokoro, Takashi; Tsuzuki, Ken; Akage, Y.; Iga, R.; Yamanaka, T.; Kano, F.

doi:10.1049/el.2009.1846

Cited by 45 publications

(9 citation statements)

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“…The structure of our EADFB lasers are similar to those reported in the past [4]. The layer structures of the DFB laser and EAM were grown by metal-organic vapour-phase epitaxy (MOVPE).…”

mentioning

confidence: 56%

“…For the transmitter, four-lane light sources with the modulation speed of 25 Gbit/s are, therefore, required with their optical multiplexer. 25 Gbit/s electroabsorption modulators integrated with distributed feedback lasers (EADFB lasers) are promising candidates for the light sources and have been intensively studied [1][2][3][4][5]. For future high-speed parallel LAN beyond 100G, the development of light sources with faster modulation speed is very important to reduce the number of lanes and make the wavelength management easier.…”

mentioning

confidence: 99%

“…Large DE c provides better overlap between the conduction-and valenceband wavefunctions under bias voltage, making the absorption coefficient larger. We used InGaAlAs-based QW since it is the ideal material system to obtain small DE n and large DE c [4,5]. In addition, adjusting the amount of strain enables us to engineer the 'effective' DE n (the energy difference between the energies of barrier state and first valence subband).…”

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confidence: 99%

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1.3 [micro sign]m, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications

et al. 2011

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A 1.3 mm, 50 Gbit/s electroabsorption modulator integrated with a DFB laser for future parallel LAN, the total data rate of which is over 100 Gbit/s, is developed. Very clear eye openings after 40 km transmission under 50 Gbit/s operation on singlemode fibre are demonstrated for eight wavelengths with discrete packages for the first time.Introduction: Owing to recent demands for huge data capacity in data communications systems originating from, for example, cloud computing and communications between data centres, the data rate required in local area networks (LANs) is becoming higher and higher. To meet this requirement, 100Gbit Ethernet (100GbE) was recently standardised in 2010. In 100GbE, a multi-lane LAN-WDM system is employed, in which 25 Gbit/s × 4 lane signals with the 800 GHz wavelength spacing around 1.3 mm are used. For the transmitter, four-lane light sources with the modulation speed of 25 Gbit/s are, therefore, required with their optical multiplexer. 25 Gbit/s electroabsorption modulators integrated with distributed feedback lasers (EADFB lasers) are promising candidates for the light sources and have been intensively studied [1][2][3][4][5]. For future high-speed parallel LAN beyond 100G, the development of light sources with faster modulation speed is very important to reduce the number of lanes and make the wavelength management easier. To cope with the demand, we recently reported 50 Gbit/s EADFB lasers for four wavelengths at a conference [6].In the work reported in this Letter, we developed 1.3 mm, 50 Gbit/s InGaAlAs-based EADFB lasers and demonstrated 50 Gbit/s, 40 km transmission on SMF for eight wavelengths and obtained very clear eye openings. With this work, the feasibility of the 400G system by using 50 Gbit/s light sources is demonstrated for the first time. The device is a promising light source for future high-speed LAN beyond 100G.

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“…The structure of our EADFB lasers are similar to those reported in the past [4]. The layer structures of the DFB laser and EAM were grown by metal-organic vapour-phase epitaxy (MOVPE).…”

mentioning

confidence: 56%

mentioning

confidence: 99%

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confidence: 99%

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1.3 [micro sign]m, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications

et al. 2011

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“…As shown in Fig. 9 we halved the V m for a given OMA compared with our conventional EA-DFB laser [5] whose DFB laser and EAM have the same MQWs and electrode design as those of the MZEA-DFB laser. The MZEA-DFB laser exhibits a larger output power than a conventional EA-DFB laser for a given DER and V m , in spite of the loss being greater than that of a conventional EA-DFB laser because of the bias MZI extinction.…”

Section: B Optical Modulation Performancementioning

confidence: 99%

“…E LECTROABSORPTION modulator (EAM)-integrated distributed feedback lasers (EA-DFB lasers) are key components of metro-area and client-side optical communication systems [1]- [5]. In such middle-distance applications, optical transmitters are needed to transmit data at a higher rate with a lower power consumption.…”

Section: Introductionmentioning

confidence: 99%

Low Driving Voltage Operation of MZI-Type EA Modulator Integrated With DFB Laser Using Optical Absorption and Interferometric Extinction

Ueda

Fujisawa

Kanazawa

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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We have developed a novel electroabsorption modulator (EAM)-integrated distributed feedback laser (EA-DFB laser), in which an EAM functioning as an external modulator is integrated in a Mach-Zehnder interferometer (MZI). The MZI-type EAM (MZEA) modulates light intensity by both optical absorption and interferometric extinction. As a result, it improves the extinction ratio (ER) of a conventional EAM, which allows us to reduce the modulation voltage (V m ), and thus reduce the power consumption of the driver circuit. A fabricated MZEA-integrated DFB laser (MZEA-DFB laser) exhibited high-ER operation and an output power of about 8 dBm, which is comparable to that of a conventional EA-DFB laser, with a 100-mA laser current. Thanks to the high ER and sufficient output power, the MZEA-DFB laser operating at half the V m of a conventional EA-DFB laser is able to generate optical signals with a given optical modulation amplitude, and we achieved a 25.8-Gb/s 40-km transmission with the novel laser at a V m of 1V p p .

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Four‐channel directly modulated square‐rectangular laser array in the O‐band

Huang

Xiao

et al. 2021

Micro & Optical Tech Letters

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A four-channel directly modulated square-rectangular laser array was demonstrated in 1.3 μm wavelength range with the wavelength interval about 5 nm. The laser array shows stable single mode operation with the side-mode suppression ratio (SMSR) over 30 dB, 3-dB modulation bandwidth above 11.8 GHz and an open-eye diagram is obtained at data rates of 10 Gb/s, and the relative intensity noise (RIN) about À138 dB/Hz up to 5 GHz for all channels.

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25 Gbit/s 1.3 [micro sign]m InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system

Cited by 45 publications

References 4 publications

1.3 [micro sign]m, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications

1.3 [micro sign]m, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications

Low Driving Voltage Operation of MZI-Type EA Modulator Integrated With DFB Laser Using Optical Absorption and Interferometric Extinction

Four‐channel directly modulated square‐rectangular laser array in the O‐band

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