“…Besides, all of the Al 2 O 3 /ZnO nanolaminates show a transmittance above 90% in visible and near-infrared region, along with a sharp absorption band edge. The transmittance here shows nearly similar value and trend with that of many other TCO materials [ 36 ], which makes it possible to be applied as TCO material. Fig.…”
This report mainly focuses on the investigation of morphological, optical, and electrical properties of Al2O3/ZnO nanolaminates regulated by varying bilayer thicknesses. The growth mechanism of nanolaminates based on atomic layer deposition and Al penetration into ZnO layer are proposed. The surface roughness of Al2O3/ZnO nanolaminates can be controlled due to the smooth effect of interposed Al2O3 layers. The thickness, optical constants, and bandgap information of nanolaminates have been investigated by spectroscopic ellipsometry measurement. The band gap and absorption edge have a blue shift with decreasing the bilayer thickness on account of the Burstein-Moss effect, the quantum confinement effect and the characteristic evolution of nanolaminates. Also, the carrier concentrations and resistivities are found to be modified considerably among various bilayer thicknesses. The modulations of these properties are vital for Al2O3/ZnO nanolaminates to be used as transparent conductor and high resistance layer in optoelectronic applications.
“…Besides, all of the Al 2 O 3 /ZnO nanolaminates show a transmittance above 90% in visible and near-infrared region, along with a sharp absorption band edge. The transmittance here shows nearly similar value and trend with that of many other TCO materials [ 36 ], which makes it possible to be applied as TCO material. Fig.…”
This report mainly focuses on the investigation of morphological, optical, and electrical properties of Al2O3/ZnO nanolaminates regulated by varying bilayer thicknesses. The growth mechanism of nanolaminates based on atomic layer deposition and Al penetration into ZnO layer are proposed. The surface roughness of Al2O3/ZnO nanolaminates can be controlled due to the smooth effect of interposed Al2O3 layers. The thickness, optical constants, and bandgap information of nanolaminates have been investigated by spectroscopic ellipsometry measurement. The band gap and absorption edge have a blue shift with decreasing the bilayer thickness on account of the Burstein-Moss effect, the quantum confinement effect and the characteristic evolution of nanolaminates. Also, the carrier concentrations and resistivities are found to be modified considerably among various bilayer thicknesses. The modulations of these properties are vital for Al2O3/ZnO nanolaminates to be used as transparent conductor and high resistance layer in optoelectronic applications.
“…Moreover, it is clear that the optical transmittance of the films was slightly enhanced with the growing Al content, and the transmittance in the visible region is still higher than 85 %. The transmittance value is close to that of other common TCO films [ 38 ], which is important for the applications in the field of solar cell. Fig.…”
The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-016-1625-0) contains supplementary material, which is available to authorized users.
“…The J sc in a glass/ITO/ZnO/CdS structure could be calculated and estimated by integrating the transmittance spectrum T (λ) of this structure multiplied by the AM 1.5 solar photon current density J solar (λ). The J sc in mA cm −2 defined as the fraction of photons transmitted across of a glass/ITO/ZnO/CdS structure that can be used to generate an electron-hole (e-h) pair can be defined as [21]…”
Section: Resultsmentioning
confidence: 99%
“…P solar (λ) is the AM 1.5 solar spectrum in J cm −2 nm −1 , λ is the wavelength in nanometres (nm), e the electron electrical charge (1.60×10 −19 C) and e/ hc = 8.08×10 −4 C J −1 nm −1 [21]. In order to determine J sc in a glass/ITO/ZnO/CdS structure, three different heterostructures were prepared to make a comparison; one structure without a ZnO film, and two others with ZnO grown from the mixed and sintered targets, respectively.…”
ZnO thin films were deposited on ITO/glass substrates by pulsed laser deposition (PLD) using two different kinds of targets. One of the targets was made of pure ZnO powder and the other one consisted of a mixture of ZnO powder with cyanoacrylate glue. The structural and morphological properties of the films obtained using both targets were compared, in order to determine which one produces samples with properties more suitable for their use as buffer and antireflective layer in CdTe-based solar cells, also different heterostructures were deposited to study the optical properties of the obtained thin films and their utility in the applications mentioned before. The films deposited with the mixture powder target were polycrystalline with preferential orientations in the planes (100) and (101) with a high transmittance in the range of 70-90% in the 540-850 nm wavelength region and showed a high resistivity of ∼1.30×10 2 cm −1 , such properties are considered to be appropriate for thin films that are wanted to be used as a buffer and antireflective layer in CdTe solar cells.
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