A Ferroelectric-Capacitor-Based Tunable Matching Network for Quad-Band Cellular Power Amplifiers

Tombak, A.

doi:10.1109/tmtt.2006.889349

Cited by 33 publications

(13 citation statements)

References 13 publications

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“…For upcoming microwave applications, capacitance tunability is one key-functionality to adjust components and systems like phase-shifters, 1,2 tunable filters 3,4 and matching networks 5,6,7 to meet future requirements, e.g. for mobile communications up to 10 GHz.…”

Section: Introductionmentioning

confidence: 99%

Influence of sputter deposition parameters on the properties of tunable barium strontium titanate thin films for microwave applications

Schafranek

Giere

Balogh

et al. 2009

Journal of the European Ceramic Society

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Section: Introductionmentioning

confidence: 99%

Influence of sputter deposition parameters on the properties of tunable barium strontium titanate thin films for microwave applications

Schafranek

Giere

Balogh

et al. 2009

Journal of the European Ceramic Society

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“…The replacement of fixed frequency band circuits with reconfigurable circuits will save space and cost for communication systems. 70 Figure 14 shows a typical front-end of a single frequency band RF communication system.…”

Section: Technology Drivers For Oxide and Multi-ferroic Thin Filmmentioning

confidence: 99%

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

Subramanyam¹,

Cole²,

Sun³

et al. 2013

Journal of Applied Physics

145

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There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges. V C 2013 AIP Publishing LLC.

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“…Among different other techniques[ l] , [2] , [3], supply-or load modulation are investigated to achieve improved efficiency at distinct frequencies. Recently, Barium Strontium-Titanate (BST) varactors have been proposed as an alternative to semiconductor and MEMS technologies in the design of tunable matching networks for reconfigurable multi-band RF-power amplifiers (PAs) [4]. Furthermore, load modulation applications where the varactor tuning is used to maintain high efficiency over a large dynamic range of the input signal have been shown [5].…”

Section: Introductionmentioning

confidence: 99%

Tunable in-package impedance matching for high power transistors based on printed ceramics

Wiens

Preis

Köhler

et al. 2015

2015 European Microwave Conference (EuMC)

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This work addresses tunable matching networks (TMN) for in-package integration of RF-power transistors, fab ricated on functional thick film layers of Barium-Strontium Titanate (BST). The deposition of BST layers is performed in a screen printing process. The TMN is designed to cover the typical GaN-HEMT output impedance range from 7 Ohm to 20 Ohm and transforms it directly to 50 Ohm. The insertion loss varies in a range between 0.4 dB and 1.1 dB, depending on frequency and tuning voltage. Co-simulations, implementing a model of a GaN-HEMT in combination with the TMN were carried out. The performance of the TMN is evaluated and compared to a reference non-tunable matching network with regards to drain efficiency and output power over the frequency range from 0.8 GHz to 3.0 GHz. Simulation results are verified with a system measurement of PA and TMN at 2 GHz in class AB, showing a drain efficiency of 47.1 % and output power of 36.9 dBm.

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A Ferroelectric-Capacitor-Based Tunable Matching Network for Quad-Band Cellular Power Amplifiers

Cited by 33 publications

References 13 publications

Influence of sputter deposition parameters on the properties of tunable barium strontium titanate thin films for microwave applications

Influence of sputter deposition parameters on the properties of tunable barium strontium titanate thin films for microwave applications

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

Tunable in-package impedance matching for high power transistors based on printed ceramics

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