A feedback method for investigating carrier distributions in semiconductors

Miller, G. L.

doi:10.1109/t-ed.1972.17557

Cited by 124 publications

(22 citation statements)

References 4 publications

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“…The simplest method to keep the volume of the SCR constant is to maintain the capacitance C of the diode constant by adjusting the reverse bias [52,68,99,101,160,204,122].…”

Section: Voltage Transientmentioning

confidence: 99%

“…[66,156] and the circuit can be further improved using analog memory circuits [lSS,SO4,23 81. Just as the charge transient is a result from electronic processing of the current transient, the voltage transient is obtained when the capacitance is maintained constant by an electronic feedback circuit [52,68,99,101,160,204,122] which is used in combination with a fast and sensitive capaci tance meter. Unlike the charge transien t circuit, this feedback circuit does not process the signal but it changes the experimental conditions, i.e.…”

Section: 7 1 Excitation (Fiuing Puise)mentioning

confidence: 99%

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Development and Applications of a New Deep Level Transient Spectroscopy Method and New Averaging Techniques

Kolev

Deen

1999

Advances in Imaging and Electron Physics

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This manuscript has been reproduced frorn the microfilm master. UMI films the text directly from the original or copy submitted. Thus, some thesis and dissertation copies are in typewriter face, while others may be frorn any type of computer printer.The quality of this reproduction i s dependent upon the quality of the copy submitted. Broken or indistinct ptint, colored or poor quality illustrations and photographs, print bleedthrough, substandard margins, and improper alignment can adversely affect reproduction.In the unlikely event that the author did not send UMI a complete manuscript and there are missing pages, these will be noted. Also, if unauthorized wpwght material had to be removed, a note will indicate the deletion.Oversize materials (e-g., maps, drawings, charts) are reproduced by sedioning the original, beginning at the upper left-hand corner and continuing from left to right in equal sections with small overlaps. Each original is also photographed in one exposure and is included in reduced form at the back of the book.Photographs included in the original manuscript have been reproduced xerographically in this copy. Higher quality 6" x 9" black and white photographic prints are available for any photographs or illustrations appearing in this w p y for an additional charge. Contact UMI directly to order. The author has granted a nonexclusive licence allowing the National Library of Canada to reproduce, loîn, distribute or sell copies of this thesis in microform, paper or electronic formats.The author retains ownership of the copyright in this thesis. Neither the thesis nor substantial extracts fiom it may be printed or othenirise reproduced without the author's permission.L'auteur a accordé une licence non exclusive permettant à la Bibliothéque nationale du Canada de reproduire, prêter, distribuer ou vendre des copies de cette thèse sous la forme de microfiche!film, de reproduction sur papier ou sur format électronique.L'auteur conserve la propriété du droit d'auteur qui protège cette thèse. Ni fa thèse ni des extraits substantiels de celle-ci ne doivent être imprimés ou autrement reproduits sans son autorisation, AbstractIn this thesis, we report new advancements in the field of Deep Level Transient Spectroscopy (DLTS) which is a powerfûl method for investigation of elecûically active point defects in semiconductors. We demonstrate these advancements by building a stateof-the-art DLTS system and perfonning extensive measurements on several types of fieldeffec t transis tors (FETs) .We iltroduce a new approach to digital signal processing in DLTS systems. The problems of signal recovery from noise and efficient data storage are addressed separately from the transient signal analysis. We combine two complementary digital averaging techniques which substantially improve the DLTS digital signal processing. Compared to other digital D U S systems, the new averaging techniques offer an improved time resolution at the beginning of the transient, improved signal-to-noise ratio, and more efficient data stor...

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“…The simplest method to keep the volume of the SCR constant is to maintain the capacitance C of the diode constant by adjusting the reverse bias [52,68,99,101,160,204,122].…”

Section: Voltage Transientmentioning

confidence: 99%

Section: 7 1 Excitation (Fiuing Puise)mentioning

confidence: 99%

Development and Applications of a New Deep Level Transient Spectroscopy Method and New Averaging Techniques

Kolev

Deen

1999

Advances in Imaging and Electron Physics

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“…- [4] is probably the single most important method used to characterize GaAs films grown on semi-insulating substrates for MESFET [ 5 ] applications. The reasons for the wide acceptance of this measurement technique are clear: 1) many common metals form excellent Schottky barriers on GaAs without elaborate surface preparation, passivation, or guarding; 2) one relatively simple measurement provides the material parameters of greatest interest to the crystal grower and de- Wiley and Miller emphasized that when profiling GaAir FET films one must not automatically assume that the mea.…”

Section: Introduction Apacitance-voltage (C-v) Profiling [I]mentioning

confidence: 99%

C-V profiling of GaAs FET films

Wiley

1978

IEEE Trans. Electron Devices

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Abstract-The depletion layer capacitance of a Schottky barrier on a GaAs FET fiim can only be measured in series with the resistance of the undepleted portion of the film. This inherent series resistance may be significant at all values of bias and causes large errors in C-V profile determinations. By treating the depletion layer capacitance and the series resistance as a distributed R C transmission line, it is possible to define an effective series resistance which can be related directly to the resistivity of the film. Using parameters typical of epitaxial films grown for GaAs FET applications, general criteria are developed for the profilability of these films. It is shown that, in general, films with small pinchoff voltages (i.e., films intended for low-noise FET applications)

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“…1 Introduction Although a photovoltaic power generator in principle is a d.c. current source the determination of its a.c. parameters is essential for (i) basic device characterisation, (ii) process control procedures and (iii) outdoor operation as illustrated by the following examples: Doping and impurity distribution of solar cells are commonly deduced from impedance spectroscopy of the reverse biased junction [1][2][3] The quality control during solar cell and module production prefers fast techniques to access electrical parameters. So called quasi-steady-state, QSS conditions during transient recording are widely applied [4,5].…”

mentioning

confidence: 99%

Investigations of the complex impedance of photovoltaic cells under illumination

Kancsar

Drapalik

Schmid

et al. 2011

Phys. Status Solidi C

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The low pass characteristic of a photovoltaic device in the power converting voltage range was investigated by impedance spectroscopy and signal response measurements. For a c‐Si solar cell it was found that the bandwidth varies with bias voltage, illumination intensity and circuit termination. At low intensities or voltages below +0.15 V the bandwidth becomes less than 100 Hz when the cell was terminated with a high resistive load. As a consequence reliable data acquisition of the open circuit voltage transient for a fast intensity variation (≥100 mWcm–2/s) is limited to voltages above +0.35 V. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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A feedback method for investigating carrier distributions in semiconductors

Cited by 124 publications

References 4 publications

Development and Applications of a New Deep Level Transient Spectroscopy Method and New Averaging Techniques

Development and Applications of a New Deep Level Transient Spectroscopy Method and New Averaging Techniques

C-V profiling of GaAs FET films

Investigations of the complex impedance of photovoltaic cells under illumination

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