A Fast Voltage Clamp Circuit for the Accurate Measurement of the Dynamic ON-Resistance of Power Transistors

Gelagaev, Ratmir; Jacqmaer, Pieter; Driesen, Johan

doi:10.1109/tie.2014.2349876

Cited by 89 publications

(42 citation statements)

References 27 publications

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“…logic and delay circuitry between the gate drivers of T 2 and T p results necessary and introduces a blanking time. Therefore, the less intuitive passive solution is preferred and herein considered, however additional challenges need to be faced [20].…”

Section: Conventonal On-state Voltage Measurement Circuitsmentioning

confidence: 99%

“…Recently, the increased interest of the power electronic community in wide bandgap semiconductors, combining reduced R ds,on values with increased switching speeds, motivated the interest to derive solutions offering better accuracy and higher bandwidth, e.g. [19] and [20], where also a comprehensive overview of the state-of-the-art is discussed. However, these concepts still reveal limited performance: [20] suffers significantly from noise and common-mode disturbances, and is tested only at high OV values, while [18] and [19] have an intrinsic accuracy limitation, i.e.…”

mentioning

confidence: 99%

“…[19] and [20], where also a comprehensive overview of the state-of-the-art is discussed. However, these concepts still reveal limited performance: [20] suffers significantly from noise and common-mode disturbances, and is tested only at high OV values, while [18] and [19] have an intrinsic accuracy limitation, i.e. an unknown diode forward voltage drop in the OVM path, as discussed in Section II.…”

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confidence: 99%

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On-State Voltage Measurement of Fast Switching Power Semiconductors

2018

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Abstract-The on-state resistance R ds,on is a key characteristic of unipolar power semiconductors and its value depends on the operating conditions, e.g. junction temperature, conducted current and applied gate voltage. Hence, the exact determination of the R ds,on value cannot rely on datasheet information and requires the measurement of current and on-state voltage during operation. Besides the determination of the conduction losses, the onstate voltage measurement enables dynamic R ds,on analysis, device temperature estimation, condition monitoring and consequently time-to-failure prediction. However, in contrast to a switch current measurement, several challenges arise in the design of an on-state voltage measurement circuit (OVMC), i.e. high measurement accuracy (mV-range) during on-state, high blocking voltage capability (kV-range) during off-state and fast dynamic response (ns-range) during switching transitions are demanded. Different OVMC concepts are known from IGBT applications, however, the more severe requirements introduced from the high switching frequency and low OV characterizing the operation of fast switching power semiconductors, prevent their usage. Off-the-shelf products hardly satisfy the mentioned specifications, whereas the performance of state-of-the-art OVM research prototypes require further investigations and/or improvements. With this aim, an innovative OVMC concept is designed, analyzed, calibrated and tested in this paper. Furthermore, the conduction losses of different power semiconductors are measured as function of their operating conditions to validate the performance and highlight the potential of the proposed OVMC.Index Terms-Conduction loss measurement, on-state resistance, on-state voltage measurement circuit.

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Section: Conventonal On-state Voltage Measurement Circuitsmentioning

confidence: 99%

mentioning

confidence: 99%

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confidence: 99%

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On-State Voltage Measurement of Fast Switching Power Semiconductors

2018

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“…Instead of measuring voltage range between V DS(on) and V DS , a much smaller voltage range between V DS(on) and V clamp is measured, thus the measurement sensitivity is increased. Compared to the similar type voltage clamping circuits that are analyzed by authors in [6], less components and no external power supply are used in this clamping circuit.…”

Section: A Measurement Circuitmentioning

confidence: 99%

GaN-HEMT dynamic ON-state resistance characterisation and modelling

Evans

Johnson

2016

2016 IEEE 17th Workshop on Control and Modeling for Power Electronics (COMPEL)

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Abstract-GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (R DS(on) ) values. Thus, dynamic R DS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement results, a behavioural model is proposed to represent device dynamic R DS(on) values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of R DS(on) values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that R DS(on) values of this device would increase due to trapping effects.

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“…The goal of the clamping circuit is to keep the voltage at approximately the same magnitude during both on and off state while at the same time allow for accurate measurement of the on-state voltage. Several circuits for high accuracy measurement of dynamic on-resistance are suggested in the literature [4], [6], [8], [9], [10]. A comparison of the circuits is presented in [11].…”

Section: Methodsmentioning

confidence: 99%

Modelling and quantification of power losses due to dynamic on-state resistance of GaN E-mode HEMT

Spro

Peftitsis

Midtgård

et al. 2017

2017 IEEE 18th Workshop on Control and Modeling for Power Electronics (COMPEL)

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Abstract-This paper investigates a method for quantifying the additional losses in high-voltage GaN enhancement mode HEMTs (eHEMT) employed in converter applications. The additional losses stem from the phenomenon known as current collapse or dynamic on-state resistance. The goal of this work is to investigate how these losses contribute to the total power loss in converter application. Measurement and modelling methods in the literature are reviewed. Changes to the measurement circuit are made to improve measurement accuracy. Measurements of dynamic on-state resistance are made on a commercial GaN eHEMT. The experimental results shows that the resistance depends on both dc-link voltage and blocking time. The resistance waveform and initial attempts at modelling the dynamic onstate resistance indicate that the suggested model is suitable for modelling the losses in LTSPICE software.

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A Fast Voltage Clamp Circuit for the Accurate Measurement of the Dynamic ON-Resistance of Power Transistors

Cited by 89 publications

References 27 publications

On-State Voltage Measurement of Fast Switching Power Semiconductors

On-State Voltage Measurement of Fast Switching Power Semiconductors

GaN-HEMT dynamic ON-state resistance characterisation and modelling

Modelling and quantification of power losses due to dynamic on-state resistance of GaN E-mode HEMT

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