On-State Voltage Measurement of Fast Switching Power Semiconductors

Guacci, Mattia; Bortis, Dominik; Kolar, Johann W.

doi:10.24295/cpsstpea.2018.00016

Cited by 59 publications

(24 citation statements)

References 16 publications

(43 reference statements)

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“…We measure dR on on a commercially-available GaN HEMT (the device-under-test, or "DUT") with a breakdown voltage rating (BV ds ) of less than 200 V, with exact parameters hidden for anonymity. We use the on-state voltage measurement circuit (OVMC) from [11] (where the theoretical basis of this measurement circuit is given), with the 600 V SiC Schottky blocking diodes in [11] replaced with a 150 V Schottky (RB558VAM150 [19]) with less stored charge to speed the transient response to under 50 ns (see Fig. 1(b), with the key components listed in Table I).…”

Section: Methodology and Test Setupmentioning

confidence: 99%

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The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs

Zulauf

Guacci

Rivas-Davila

et al. 2020

IEEE Open J. Power Electron.

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Dynamic on-resistance (dR on), where the on-resistance immediately after turn-on is higher than the DC resistance, increases the conduction losses in power converters with gallium nitride high-electronmobility transistors (GaN HEMTs). There exist no direct dR on measurements in the literature above 1 MHz, leaving designers unable to predict conduction losses in emerging multi-MHz applications. We address this literature gap by collecting the first on-state voltage dR on measurements at multi-MHz frequencies, with a focus on the zero-voltage-switching conditions that are predominantly employed at high frequency. On the selected commercially-available HEMT with a breakdown voltage below 200 V, the dynamic contribution asymptotes above ≈ 2 MHz, a finding predicted by the slow time constants of the traps that cause dR on. For the tested HEMT, we find a maximum dR on increase over the DC resistance of 2× in a multi-MHz, zero-voltage-switched application.

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Section: Methodology and Test Setupmentioning

confidence: 99%

“…For the same commercially-available devices, though, Refs. [11]- [14] use direct on-state voltage measurements to get increases over R dc of 5%, 20%, 50%, and 70%, respectively, at 1 MHz. These discrepancies are partially a result of the prevalence of pulsed measurements (e.g.…”

Section: Introductionmentioning

confidence: 99%

The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs

Zulauf

Guacci

Rivas-Davila

et al. 2020

IEEE Open J. Power Electron.

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“…The conventional device characterization method based on TCM is used to measure GaN device dynamic R DSon when device operates in HF converter [17], [21]. Measurement error caused by unavoidable circuit parasitic inductance L c under TCM on device ON-state resistance has been raised by authors in [21]. However, there is no solution proposed to compensate the measurement error.…”

Section: Measuring Gan Device Dynamic R Dsonmentioning

confidence: 99%

Accurate Measurement of Dynamic on-State Resistances of GaN Devices Under Reverse and Forward Conduction in High Frequency Power Converter

Videt²,

Idir³

et al. 2020

IEEE Trans. Power Electron.

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Because of trapped charges in GaN transistor structure, device dynamic ON-state resistance R DSon is increased when it is operated in high frequency switched power converters, in which device is possibly operated by zero voltage switching (ZVS) to reduce its turn-ON switching losses. When GaN transistor finishes ZVS during one switching period, device has been operated under both reverse and forward conduction. Therefore its dynamic R DSon under both conduction modes needs to be carefully measured to understand device power losses. For this reason, a measurement circuit with simple structure and fast dynamic response is proposed to characterize device reverse and forward R DSon. In order to improve measurement sensitivity when device switches at high frequency, a trapezoidal current mode is proposed to measure device R DSon under almost constant current, which resolves measurement sensitivity issues caused by unavoidable measurement circuit parasitic inductance and measurement probes deskew in conventional device characterization method by triangle current mode. Proposed measurement circuit and measurement method is then validated by first characterizing a SiC-MOSFET with constant R DSon. Then, the comparison on GaN-HEMT dynamic R DSon measurement results demonstrates the improved accuracy of proposed trapezoidal current mode over conventional triangle current mode when device switches at 1 MHz.

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“…The loss model is extended by incorporating additional parasitic capacitances, which cause increased hard-switching losses (e.g., due to the PCB routing or the half-bridge inductors). Dynamic behavior of the transistor on-state conduction resistance R DS;on is not observed and is thus not modeled [42]. The resulting loss energies for each half-bridge transistor during one PWM cycle (i.e., two switching transitions) are illustrated in Fig.…”

Section: A Transistor Loss Modelmentioning

confidence: 99%