A fast high-voltage pulse generator with variable amplitude and duration

Upadhyay, J.; Navathe, C. P.

doi:10.1088/0957-0233/17/7/n01

Cited by 11 publications

(5 citation statements)

References 8 publications

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“…One of the most popular solutions dedicated to high-power drivers utilizes single switching devices [1,2,6,7]. For this reason, the avalanche transistors for over 60 years [9] were the commonly used devices in laser pulsed generators [6,7]. However, nowadays most of the modern systems utilize Field Effect Transistors (FET) [1,2].…”

Section: Dual-fet Output Stage Topologymentioning

confidence: 99%

“…The novel topology of the pulsed laser driver described in this paper is shown in Figure 2. It combines two symmetrical structures from Figure 2b, although a single shared delay line is used [7]. The operation of the circuit can be divided into two adjacent phases.…”

Section: Dual-fet Output Stage Topologymentioning

confidence: 99%

“…The proper choice of semiconductor switches was aimed at minimizing the noise and maximizing the driver's speed of operation. The avalanche transistors exhibit fast and high-current pulses [6,7], but they suffer from the thermal drift and high power loses. On the other hand, large gate and parasitic capacitances of high-power Metal-Oxide Semiconductor (MOS) devices make them suitable only in resonant circuits [1,2].…”

Section: Tranistor Switchesmentioning

confidence: 99%

“…The direct modulation of the semiconductor laser current is a commonly used technique to produce fast optical pulses [1,2,[6][7][8] and has the advantage of simple and inexpensive operation. Many different topologies have been discussed so far [1,2,6,7]; however, noise parameters are rarely recalled. Considering those facts, a novel direct laser current modulator was designed and constructed resulting in the outstanding noise and switching properties.…”

Section: Introductionmentioning

confidence: 99%

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Charge-Line Dual-FET High-Repetition-Rate Pulsed Laser Driver

Żbik

Wieczorek

2019

Applied Sciences

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Most modern pulsed laser systems require versatile laser diode drivers. A state-of-the-art pulsed laser driver should provide precise peak power regulation, high repetition rate, and pulse duration control. A new, charge line dual-FET transistor circuit structure was developed to provide all these features. The pulsed modulation current is adjustable up to Imax = 1.2 A, with the laser diode forward voltage acceptable up to UF max = 20 V. The maximum repetition rate is limited by a charge line circuit to frep max = 20 MHz. Compared to the conventional single transistor drivers, the solution proposed in this paper allows a precise, high resolution width regulation to be obtained, whereas a low pulse jitter is ensured. In the solution, two separate, out-of-phase signals are used to trigger the individual Field Effect Transistors (FET). The resultant pulsed modulation current full-width-at-half-maxima (FWHM) is regulated from ~200 ps up to 2 ns. All control and timing signals are generated with a popular Field-Programmable Gate Array (FPGA) digital circuitry. The use of standard FPGA devices ensures the low cost and high reliability of the circuit, which are not available in laser drivers consisting of sophisticated analogue adjustable delay circuits.

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Section: Dual-fet Output Stage Topologymentioning

confidence: 99%

Section: Dual-fet Output Stage Topologymentioning

confidence: 99%

Section: Tranistor Switchesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Charge-Line Dual-FET High-Repetition-Rate Pulsed Laser Driver

Żbik

Wieczorek

2019

Applied Sciences

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“…One can also utilize telescopic antenna and ferrites in the pulse-forming line of the generator to produce 1–10 ns pulses with tens of kilovolts of amplitude and subnanosecond rise-times [ 38 ]. Another approach used two avalanche transistor stacks as switches to generate 800 V to 3.8 kV pulses with 5–38 ns pulse widths [ 39 ]. Alternatively, one can configure two MOSFET based 10 kV switches in differential mode to generate 1 kV to 10 kV pulses with rise-times shorter than 5 ns [ 40 ].…”

Section: Introductionmentioning

confidence: 99%

Design, characterization and experimental validation of a compact, flexible pulsed power architecture for ex vivo platelet activation

et al. 2017

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Electric pulses can induce various changes in cell dynamics and properties depending upon pulse parameters; however, pulsed power generators for in vitro and ex vivo applications may have little to no flexibility in changing the pulse duration, rise- and fall-times, or pulse shape. We outline a compact pulsed power architecture that operates from hundreds of nanoseconds (with the potential for modification to tens of nanoseconds) to tens of microseconds by modifying a Marx topology via controlling switch sequences and voltages into each capacitor stage. We demonstrate that this device can deliver pulses to both low conductivity buffers, like standard pulsed power supplies used for electroporation, and higher conductivity solutions, such as blood and platelet rich plasma. We further test the effectiveness of this pulse generator for biomedical applications by successfully activating platelets ex vivo with 400 ns and 600 ns electric pulses. This novel bioelectrics platform may provide researchers with unprecedented flexibility to explore a wide range of pulse parameters that may induce phenomena ranging from intracellular to plasma membrane manipulation.

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Development of high-voltage pulse-slicer unit with variable pulse duration for pulse radiolysis system

Upadhyay

Sharma

Navathe

et al. 2012

Review of Scientific Instruments

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A high-voltage pulse-slicer unit with variable pulse duration has been developed and integrated with a 7 MeV linear electron accelerator (LINAC) for pulse radiolysis investigation. The pulse-slicer unit provides switching voltage from 1 kV to 10 kV with rise time better than 5 ns. Two MOSFET based 10 kV switches were configured in differential mode to get variable duration pulses. The high-voltage pulse has been applied to the deflecting plates of the LINAC for slicing of electron beam of 2 μs duration. The duration of the electron beam has been varied from 30 ns to 2 μs with the optimized pulse amplitude of 7 kV to get corresponding radiation doses from 6 Gy to 167 Gy.

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A fast high-voltage pulse generator with variable amplitude and duration

Cited by 11 publications

References 8 publications

Charge-Line Dual-FET High-Repetition-Rate Pulsed Laser Driver

Charge-Line Dual-FET High-Repetition-Rate Pulsed Laser Driver

Design, characterization and experimental validation of a compact, flexible pulsed power architecture for ex vivo platelet activation

Development of high-voltage pulse-slicer unit with variable pulse duration for pulse radiolysis system

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