A fast and stable Poisson-Schrödinger solver for the analysis of carbon nanotube transistors

Pourfath, Mahdi; Kosina, H.; Selberherr, S.

doi:10.1007/s10825-006-8836-z

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Non-equilibrium Green's Function Approach To Scattering1

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Cited by 15 publications

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“…Fig. 17 shows the ballisticity as a function of the electron-phonon coupling strength [222]. The ballisticity is defined as I Sc =I Bl , the ratio of the on-current in the presence of electron-phonon interaction to the current in the ballistic case [223].…”

Section: Non-equilibrium Green's Function Approach To Scatteringmentioning

confidence: 99%

Current transport models for nanoscale semiconductor devices

Sverdlov

Ungersboeck

Kosina

et al. 2008

Materials Science and Engineering: R: Reports

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Section: Non-equilibrium Green's Function Approach To Scatteringmentioning

confidence: 99%

Current transport models for nanoscale semiconductor devices

Sverdlov

Ungersboeck

Kosina

et al. 2008

Materials Science and Engineering: R: Reports

Self Cite

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3D Self-Consistent Quantum Transport Simulation for GaAs Gate-All-Around Nanowire Field-Effect Transistor with Elastic and Inelastic Scattering Effects

Hsiao

2018

Phys. Status Solidi A

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As the gate length of metal-oxide-semiconductor-field-effect transistor has been scaled down to the sub-10 nm regime, semi-classical Boltzmann transport theory can no longer satisfactorily describe the behavior of carrier transport since the quantum mechanical effects start to play a dominant role. Non-equilibrium Green's function formalism (NEGF) is a fully quantum mechanical approach which can take the wave nature of electron into account, and it provides a flexible framework for including the incoherent and dissipative transport processes. In this work, the authors develope an efficient three-dimensional quantum transport simulator based on solving the NEGF and Poisson equations self-consistently to investigate the electron transport in GaAs gate-all-around (GAA) nanowire field-effect transistor (NWFET) with considering electron-phonon scattering, ionized impurity (IMP) scattering, and surface roughness (SR) scattering. Several transport properties and device characteristics can be captured by the proposed solver, such as current spectrum broadening, electron relaxation, and the role of scattering effects. It allows to think the underlying physics in a different way, which will be useful for designing and predicting the performance of transistors in nanoscale.

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