A Facile Hydrothermal Synthesis and Resistive Switching Behavior of α-Fe2O3 Nanowire Arrays

Abstract

A facile hydrothermal process has been developed to synthesize the α-Fe2O3 nanowire arrays with a preferential growth orientation along the [110] direction. The W/α-Fe2O3/FTO memory device with the nonvolatile resistive switching behavior has been achieved. The resistance ratio (RHRS/RLRS) of the W/α-Fe2O3/FTO memory device exceeds two orders of magnitude, which can be preserved for more than 103s without obvious decline. Furthermore, the carrier transport properties of the W/α-Fe2O3/FTO memory device are dominated by the Ohmic conduction mechanism in the low resistance state and trap-controlled space-charge-limited current conduction mechanism in the high resistance state, respectively. The partial formation and rupture of conducting nanofilaments modified by the intrinsic oxygen vacancies have been suggested to be responsible for the nonvolatile resistive switching behavior of the W/α-Fe2O3/FTO memory device. This work suggests that the as-prepared α-Fe2O3 nanowire-based W/α-Fe2O3/FTO memory device may be a potential candidate for applications in the next-generation nonvolatile memory devices.

Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

“…As the fourth fundamental element, the memristor has been regarded as one of the most potential candidates for future nonvolatile memory devices due to its merits in terms of non-volatility, fast memory speed, high integration density, good endurance, long retention, ultra-low power dissipation, and multilevel behaviors [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , …”

“…In recent decades, various oxides have acted as the dielectric materials for memristor applications. Among them, the transition metal oxides, such as ZnO [ 3 , 4 , 5 , 6 , 7 ], TiO 2 [ 8 , 9 , 10 , 22 , 56 , 58 , 59 , 60 ], HfO 2 [ 11 ], GaO x [ 12 ], α-Fe 2 O 3 [ 13 ], Co 3 O 4 [ 14 ], CuO x [ 15 , 23 ], WO 3 [ 16 ], NiO [ 17 ], In 2 O 3 [ 18 ], TaO x [ 19 ], and CeO 2 [ 20 ] have become a new focus because of their excellent resistive switching performances. In recent decades, increasing interest has been paid to zinc oxide (ZnO)-based devices because of their features including non-toxicity, suitable band gap (3.37 eV), high electron mobility (~120 cm 2 Vs −1 ), large exciton-binding energy (60 meV), and small electron-hole collision ionization coefficient [ 21 ].…”

Stability Enhancement in Copper-Doped Iron Oxide Resistive Random Access Memory via RF Co-Sputtering

“…[15][16][17] Organic materials encompass polymers and albumen. 18,19 10,[20][21][22][23][24][25][26][27][28][29][30][31][32][33] Compared to other organic materials, metal oxides are widely studied due to their excellent resistive switching characteristics, relatively lower manufacturing costs, and superior compatibility with CMOS technology.…”

Catalysis in Energy and the Environment: Opportunities and Challenges

“…Meanwhile, photo-/electrocatalytic materials can be employed in other applications and devices. ZnO and Fe 2 O 3 are traditional photocatalysts that are applied in memory cells for resistive switching behaviors [11,12]. Metal-organic frameworks (MOFs), as one of most promising catalyst materials, serves as a fluorescent probe in a visual sensor [13].…”