Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

Abstract

A facile sol–gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching behaviors with a high resistance ratio of about two orders of magnitude, which can be maintained for over 103 s and without evident deterioration. The tunable nonvolatile multilevel resistive switching phenomena were achieved by modulating the different set voltages of the W/ZnO/ITO memory cell. In addition, the tunable nonvolatile resistive switching behaviors of the ZnO-nanofilm-based W/ZnO/ITO memory cell can be interpreted by the partial formation and rupture of conductive nanofilaments modified by the oxygen vacancies. This work demonstrates that the ZnO-nanofilm-based W/ZnO/ITO memory cell may be a potential candidate for future high-density, nonvolatile, memory applications.

Catalysis in Energy and the Environment: Opportunities and Challenges

“…Meanwhile, photo-/electrocatalytic materials can be employed in other applications and devices. ZnO and Fe 2 O 3 are traditional photocatalysts that are applied in memory cells for resistive switching behaviors [11,12]. Metal-organic frameworks (MOFs), as one of most promising catalyst materials, serves as a fluorescent probe in a visual sensor [13].…”