A Dynamic-Biased Resistor-Based CMOS Temperature Sensor With a Duty-Cycle-Modulated Output

Tang, Zhong; Fang, Yun; Yu, Xiaopeng; Zheng, Shuang; Ling, Lin; Tan, Nianxiong

doi:10.1109/tcsii.2020.2999272

Cited by 15 publications

(4 citation statements)

References 16 publications

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“…In Table I [27,28,29,30], the performance of the proposed sensor with some state-of-the-art designs is summarized and compared. Since the adoption of an all-digital architecture, a die area of 1915 µm 2 has been occupied.…”

Section: Measurement Resultsmentioning

confidence: 99%

An all-digital CMOS temperature sensor with a wide supply voltage range

Qian

Li²,

Zhang

et al. 2022

IEICE Electron. Express

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This paper proposes a MOSFET-based all-digital temperature sensor fabricated in a standard 55-nm CMOS process. The temperature sensing elements of the sensor are composed of ring oscillators, which convert temperature information into frequency information. The frequency ratio's proportional to absolute temperature (PTAT) feature is generated by using two separate frequency oscillators with varied temperature sensitivity. The frequency-to-digital converter (FDC) converts frequency information into digital representation without introducing any overhead reference clock. A die area of 1915 µm 2 is occupied, owing to the all-digital architecture. After two-point calibration, the proposed sensor achieves an error of −0.4 • C∼+0.6 • C throughout a temperature range of −40 • C∼125 • C. With the help of class-adjustable oscillators, the sensor can function in a wide supply voltage range from 0.5 V to 1.2 V. It obtains a resolution of 0.166 • C at room temperature with a dissipation of 2.5 µW.

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Section: Measurement Resultsmentioning

confidence: 99%

An all-digital CMOS temperature sensor with a wide supply voltage range

Qian

Li²,

Zhang

et al. 2022

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

“…where I C is the charging current, t h and t l are the logichigh time and logic-low time respectively. t rst is the time duration for the capacitor to reset, which can be compensated conveniently in the digital domain [11].…”

Section: A Basic Operating Principlementioning

confidence: 99%

A BJT-Based CMOS Temperature Sensor With Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy From −40 °C to 125 °C

Huang

Tang

et al. 2021

IEEE Trans. Circuits Syst. II

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This brief presents a 0.65% relative inaccuracy CMOS temperature sensor with a duty-cycle-modulated (DCM) output. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (VP T AT ) and a complementary to absolute temperature voltage (VCT AT ), which are then modulated to a digital-friendly duty-cycle output. Dynamic element matching with Kelvin connection (KC-DEM) is applied to improve the accuracy of VP T AT . To enhance the robustness of the sensor, a continuous-time dynamic single-threshold hysteresis comparator with high energy efficiency is proposed. Implemented in a standard 0.13-µm CMOS process, the sensor has an active area of 0.086 mm 2 and achieves an inaccuracy of ±0.54 • C (3σ) from -40 • C to 125 • C.

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“…However, in the case of detecting a wide range of sensor resistance such as chemiresistive gas sensors with dynamic variation up to 5 -6 decades, this method cannot be employed due to its limitation of resistance range coverage [14]. Another strategy for R-V conversion is based on current excitation technique that forces a constant current through the sensor and measures the amplified output voltage [18]- [19], [29]- [31]. In this method, highly accurate and stable current reference sources are required to build the circuitry.…”

Section: Introductionmentioning

confidence: 99%

A Readout System for High Speed Interface of Wide Range Chemiresistive Sensor Array

Lakshminarayana

Park

et al. 2022

IEEE Access

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This paper aims at designing a compact readout system for chemiresistive sensor array with high speed and high accuracy. The proposed scheme is based on Resistance-to-Voltage (R-V) conversion and targets high density wide ranged chemiresistive sensor, with input resistance range of 1 K -1 M and 0.1% sensitivity. The proposed approach uses Adaptive Reference Resistor Tuning (ARRT) technique implemented with a digital variable potentiometer to achieve a high accuracy without sacrificing the dynamic range and the speed. The system is implemented on a printed circuit board with a microcontroller and a 16-bit Analog-to-Digital Converter (ADC), and it has a compact dimension of 10 cm × 6 cm, which is suitable for portable applications. The readout system works with a 5 V power supply, and the overall system power consumption is 150 mW. The system is designed to interface with a 118 sensor array and the experimental results achieved a satisfactory accuracy of 0.88%, as well as a measuring speed of 8.5 ms per sensor. Compared with existing approaches, our work targets a high density wide ranged chemiresistive sensor array and demonstrated high accuracy, high speed with the lowest circuit complexity, which is the novelty of this work.

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A Dynamic-Biased Resistor-Based CMOS Temperature Sensor With a Duty-Cycle-Modulated Output

Cited by 15 publications

References 16 publications

An all-digital CMOS temperature sensor with a wide supply voltage range

An all-digital CMOS temperature sensor with a wide supply voltage range

A BJT-Based CMOS Temperature Sensor With Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy From −40 °C to 125 °C

A Readout System for High Speed Interface of Wide Range Chemiresistive Sensor Array

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