A Dual Power-Mode Multi-Band Power Amplifier With Envelope Tracking for Handset Applications

Cho, Yunsung; Kang, Daehyun; Kim, Jooseung; Kim, Dong–Su; Park, Byungjoon; Kim, Bumman

doi:10.1109/tmtt.2013.2250712

Cited by 44 publications

(10 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As an alternative for conventional series switching techniques, which places series switch at the input and output of the main amplifier, in this approach a shunt switched capacitor is used to toggle between the low and high transmission energy mode. This technique does not limit the bandwidth of operation in the PA, thus enables the PA to operate for multiband operation [56].…”

Section: Envelope Tracking (Et)mentioning

confidence: 99%

Energy saving power amplifier design methodologies for mobile wireless communications

Eswaran

Ramiah

Kanesan

et al. 2015

Renewable and Sustainable Energy Reviews

View full text Add to dashboard Cite

Section: Envelope Tracking (Et)mentioning

confidence: 99%

Energy saving power amplifier design methodologies for mobile wireless communications

Eswaran

Ramiah

Kanesan

et al. 2015

Renewable and Sustainable Energy Reviews

View full text Add to dashboard Cite

“…Accordingly, many researchers have attempted to improve the efficiency of power amplifiers . The envelope tracking (ET) technique is becoming increasingly popular at present . However, to maximize the feasibility of the ET technique, the efficiency of the power amplifier itself should be improved.…”

Section: Introductionmentioning

confidence: 99%

A 2.4‐GHz CMOS power amplifier using a gain and stability enhancement technique for IEEE 802.11N WLAN applications

Lee

Park

2016

Micro & Optical Tech Letters

View full text Add to dashboard Cite

In this work, we propose a gain and stability enhancement technique with compact size for RF CMOS linear power amplifier applications. The proposed amplifier is designed with differential and cascode structures. To realize a compact size of the power amplifier, the driver stage is merged into the power stage of the power amplifier. To minimize the number of essentially required inductors, the load impedance of the power stage is shared with the driver stage of the power amplifier. Additionally, to moderate stability problems in the power amplifier, the closed loop is removed using a common‐gate transistor, which operates in the saturation region. The power amplifier can then operate in the linear operation. To prove the feasibility of the proposed linear amplifier, we designed a 2.4 GHz CMOS power amplifier using the 180‐nm RF CMOS process. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2265–2268, 2016

show abstract

“…This technique can coexist with the other efficiency enhancement techniques [6]. In the bypass PA technique, the use of switches at the output of the PA introduces significant insertion loss and corresponding loss of power-added efficiency (PAE).…”

Section: Introductionmentioning

confidence: 99%

Dual-Mode CMOS Doherty LTE Power Amplifier With Symmetric Hybrid Transformer

Kaymaksüt

Reynaert

2015

IEEE J. Solid-State Circuits

View full text Add to dashboard Cite

This paper presents a dual-mode Doherty long-term evolution (LTE) power amplifier (PA) for efficiency enhancement at power back-off. The amplifier utilizes transformer-based Doherty operation to achieve high back-off efficiency with good linearity. In addition, the PA has two power modes to further reduce the power consumption when low output power is required. The PA combines four push-pull amplifiers by using an symmetrical hybrid transformer that ensures low combining loss and high amplifier efficiency. The two-stage LTE amplifier is fabricated in standard 40 nm CMOS technology and it achieves 28 dBm output power with 1.5 V supply. The peak power-added efficiency (PAE) of the amplifier is 34% and the PAE at 6 dB and 12 dB back-off levels are still as high as 25.5% and 19.7% respectively. The amplifier is tested with 20 MHz LTE signal and it satisfies the stringent ACLR and EVM requirements at 23.4 dBm output power with a PAE of 23.3%. In addition, the amplifier achieves 18.4% PAE when 6 dB lower power is transmitted and 11.1% PAE at 12 dB back-off under LTE modulation.

show abstract

A Dual Power-Mode Multi-Band Power Amplifier With Envelope Tracking for Handset Applications

Cited by 44 publications

References 24 publications

Energy saving power amplifier design methodologies for mobile wireless communications

Energy saving power amplifier design methodologies for mobile wireless communications

A 2.4‐GHz CMOS power amplifier using a gain and stability enhancement technique for IEEE 802.11N WLAN applications

Dual-Mode CMOS Doherty LTE Power Amplifier With Symmetric Hybrid Transformer

Contact Info

Product

Resources

About