A double-recessed Al/sub 0.24/GaAs/In/sub 0.16/GaAs pseudomorphic HEMT for Ka- and Q-band power applications

Huang, Jim; Saledas, P.; Wendler, J.; Platzker, A.; Boulais, W.; Shanfield, S.; Hoke, W. E.; Lyman, P. S.; Aucoin, L.; Miquelarena, A.; Bedard, C.; Atwood, Donald K.

doi:10.1109/55.244708

Cited by 37 publications

(7 citation statements)

References 9 publications

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“…Then, the φ B value can be estimated by equation (3). The two values, φ B and n, are commonly used as the evaluating criteria of Schottky interfacial properties.…”

Section: I-v Characteristicsmentioning

confidence: 99%

“…Schottky contacts based on III-V group semiconductors have been widely applied in high speed electronic and optoelectronic devices such as diodes, field-effect transistors (FETs) and high electron mobility transistors (HEMTs) [1][2][3], due to their high frequency performances, well-behaved and highly reliable optoelectronic properties. A variety of physical methods have been used to fabricate the metalsemiconductor Schottky diodes, e.g., thermal evaporation (TE), sputtering, electron beam deposition (EB), etc.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of Pd–GaAs Schottky diodes prepared by the electroless plating technique

Chen

Hsiung

Chou

2003

Semicond. Sci. Technol.

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In this work, Pd-GaAs Schottky diodes have been fabricated by a novel electroless plating technique. A scanning electron microscope (SEM) and Raman spectra are used to characterize the surface morphology of Pd film and Pd-GaAs interface, respectively. Effects of plating variables including concentrations of PdCl 2 , N 2 H 4 and bulk plating bath, as well as the plating time, on the Pd surface morphology and current-voltage (I-V ) characteristics are investigated. From experimental results, it is revealed that I-V characteristics of Pd-GaAs diodes are strongly influenced by the Pd grain size. The Schottky barrier height is increased with decreasing Pd grain size and particle size distribution by lowering the plating temperature and concentrations of PdCl 2 , N 2 H 4 and bulk plating bath. Moreover, in the presence of sodium, I-V characteristics of the studied diodes are obviously inferior. Based on these results, the high performance Pd-GaAs Schottky diodes can be obtained by appropriately manipulating the plating conditions.D ssb interface charge state density of the semiconductor side (C −1 cm −2

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“…Then, the φ B value can be estimated by equation (3). The two values, φ B and n, are commonly used as the evaluating criteria of Schottky interfacial properties.…”

Section: I-v Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Characterization of Pd–GaAs Schottky diodes prepared by the electroless plating technique

Chen

Hsiung

Chou

2003

Semicond. Sci. Technol.

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“…Thin-film technology has been widely used in the production of electronic devices from past to present and characterization of variety of them derived from traditional metalsemiconductor (MS) junction with Schottky barrier formation between metal and semiconductor [1,2]. Schottky contacts based on group III-V semiconductors have been appeared especially in high speed optoelectronic and electronic structures such as solar cells, field-effect transistors, high electron mobility transistors, diodes [3][4][5][6][7]. Schottky diodes (SDs) are the simplest MS contact devices [8][9][10][11][12][13] and so that the understanding of which has great technological importance in the electronics.…”

Section: Introductionmentioning

confidence: 99%

Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode

Yıldız

Karabulut

Orak

et al. 2021

J Mater Sci: Mater Electron

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The electrical properties of Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor (MIS) contact structures were analyzed in detail by the help of capacitance-voltage (C-V) and conductancevoltage (G-V) measurements in the temperature range of 60-320 K. The HfO2 thin film layer was obtained by atomic layer deposition technique (ALD). The main electrical parameters such as ideality factor (n) and barrier height (B0) were determined for Au/Ti/n-GaAs and Au/Ti/HfO2/n-GaAs diodes using current-voltage (I-V) measurement at 300 K. The values of these parameters are 1.07 and 0.77 eV for the reference (Au/Ti/n-GaAs) diode, and 1.30 and 0.94 eV for the Au/Ti/HfO2/n-GaAs MIS diode, respectively. An interfacial charge density value of = 4.14x10 12 Ccm -2 for the MIS diode was calculated from the barrier height difference of ∆Φ = 0.94 − 0.77 = 0.17 V. Depending on these results, the temperature dependent C-V and G-V plots of the device were also investigated. The series resistance (Rs), phase angle, the interface state density (Dit), the real impedance ( ′ ) and imaginary impedance ( ′′ ) were evaluated using admittance measurements. The C and G values increased, whereas ′′ and Z decreased with increasing voltage at each temperature. An intersection point being independent of temperature in the G-V curves appeared at forward bias side (1.4 V), after this intersection point of the G-V plot, the G values decreased with increasing temperature at a given voltage. The intersection points in total versus V curves appeared at forward bias side (1.7 V). The Nyquist spectra was recorded for the MIS structure showing single semicircular arcs with different diameters depending on temperature.

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“…Distributed model of a dual-gate AlGaAs/GaAs pHEMT[38] (a) Typical layout, (b) Front view IET Sci. Meas.…”

mentioning

confidence: 99%

Analysis of dual‐gate high electron mobility transistor using an unconditionally stable time domain method

Mayani

Asadi

2018

IET Science, Measurement & Technology

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A double-recessed Al/sub 0.24/GaAs/In/sub 0.16/GaAs pseudomorphic HEMT for Ka- and Q-band power applications

Cited by 37 publications

References 9 publications

Characterization of Pd–GaAs Schottky diodes prepared by the electroless plating technique

Characterization of Pd–GaAs Schottky diodes prepared by the electroless plating technique

Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode

Analysis of dual‐gate high electron mobility transistor using an unconditionally stable time domain method

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