A diffraction study of a heteroepitaxial system-Ag/Si(111)

Mckenna, D.; Wang, G.-C.; Rajan, Krishna

doi:10.1007/bf02665961

Cited by 6 publications

(1 citation statement)

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“…Ag is found to grow epitaxially on both Si͑001͒ and Si͑111͒ through coincident site lattice matching, though there is a large ͑25%͒ lattice mismatch. [16][17][18][19][20] Epitaxial Ag films have been obtained mostly by molecular-beam epitaxy ͑MBE͒ process, where the energy of depositing particles is relatively low. While using magnetron sputtering process, Ag films usually obtained are nonepitaxial with ͗111͘ as the preferred growth orientation.…”

Section: Introductionmentioning

confidence: 99%

Time-evolution growth of Ag nanolayers on differently-passivated Si(001) surfaces

Bal

Hazra

2009

Phys. Rev. B

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The growth and evolution of Ag nanolayers on differently-passivated Si͑001͒ substrates at ambient condition have been studied. Initial compactness and smoothness of Ag nanolayer on the H-passivated Si͑001͒ surface are found better compared to those on the Br-passivated Si͑001͒ surface, which can be understood considering surface free energy and surface mobility of the passivated surfaces. As the time passes, the growth of dewetted three-dimensional ͑3D͒ islandlike structures ͑Volmer-Weber-type mode͒ from comparatively wetted Ag nanolayer ͑Stranski-Krastanov-type mode͒ is evident at ambient conditions. Such evolution of growth is through dewetting ͑related to the change in the interfacial energy due to the oxide growth͒, migration, and coalesce of Ag, which can even produce large epitaxial ͓Ag͑001͒/Si͑001͔͒ 3D islands on H-passivated Si͑001͒ surface. The growth rate, size, number density, and epitaxy/nonepitaxy of 3D islands are different for different passivated surfaces. These differences can be realized considering the growth time of oxide ͑i.e., instability of passivated surface͒, in-plane inhomogeneity of interfacial energy ͑i.e., inhomogeneous nature of passivation͒, and in-plane diffusion of Ag on the passivated surfaces.

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Section: Introductionmentioning

confidence: 99%