Ion beam sputter deposition of epitaxial Ag films on native oxide covered Si(100) substrates

Microstructural dependence of the fracture toughness of metallic thin films: A bulge test and atomistic simulation study on single-crystalline and polycrystalline silver films

“…Combining silver with silicon might appear paradoxical, as their lattice misfit is very high (33%). Nevertheless, epitaxial growth of silver on Si(100) has often been observed under moderate to high sputtering deposition rates [41,42,43,44,45,46]. This is usually ascribed to the fact that the length of three unit cells of silicon agrees well with that of four unit cells of silver [44,45,46], leading to an Ag(100)//Si(100) orientation relationship with Agh110i// Sih110i.…”