A detailed study on the frequency-dependent electrical characteristics of Al/HfSiO4/p-Si MOS capacitors

Lök, Ramazan; Kaya, Şenol; Karaçalı, H.; Yılmaz, Ercan

doi:10.1007/s10854-016-5461-x

Cited by 19 publications

(9 citation statements)

References 36 publications

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“…To determine Dit, several techniques have been suggested and the Hill-Coleman technique was among them. According to this technique, the density of interface states can be calculated by the following equation [12,13].…”

Section: C-v and G/ω-v Characteristicsmentioning

confidence: 99%

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FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er₂O₃/SiO₂/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM

Mutale¹,

Yılmaz²

2020

RAP Conference Proceedings

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The aim of this paper is to investigate the frequency-dependent electrical characteristics of the Al/Er2O3/SiO2 /n-Si/ Al MOS capacitor deposited by the e-beam PVD technique. The Er2O3/SiO2 films were annealed in the nitrogen ambient for 30 min at 550 o C. The crystal structure and surface morphology of thin films have been investigated by XRD and AFM. The capacitance-voltage(C-V) and conductance-voltage (G/w-V) measurements have been performed in the frequency range of 50kHz-1MHz at room temperature. Furthermore, the frequency effects on the series resistance and interface state density through C-V and G/w-V curves were studied and analyzed. It has been observed that the series resistance gives a peak for each frequency, decreasing and disappearing with increasing frequencies. Also, it has been shown that the density of interface states increases with increasing frequency. The measured and calculated results reveal that the frequency has a significant impact on both Rs and Dit of the fabricated MOS characteristics. These effects are supposed to occur because of the interfacial layer (SiO2) that is contained in between n-Si and Er2O3.

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Section: C-v and G/ω-v Characteristicsmentioning

confidence: 99%

“…Frequency-dependent MS, MIS and MOS structures have attracted large attention during the past decades and a variety of studies have been conducted by several researchers. However, frequencydependent Al/Er2O3/SiO2/n-Si/Al MOS deposited by the e-beam PVD technique has not yet been investigated [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er₂O₃/SiO₂/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM

Mutale¹,

Yılmaz²

2020

RAP Conference Proceedings

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“…The observed decreases in the conductance indicate the reduction of the interface trap densities, which are analyzed in detail later. In addition, the different shapes of the conductance curves depending on the annealing temperature are basically due to series resistance effects [9].…”

Section: Annealing-dependent Electrical Characterizationmentioning

confidence: 99%

“…[ [5][6][7][8][9]. The annealing process, which should be carefully examined during device fabrication, has been performed after gate dielectric layer deposition to reduce the number of defects and impurities in the film.…”

Section: Introductionmentioning

confidence: 99%

Effects of annealing temperature on electrical characteristics of sputtered Al/Al 2 O 3 /p-Si (MOS) capacitors

Kaya¹,

Budak²,

Yılmaz³

2018

Turk J Phys

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The aim of this study is to investigate annealing effects on the electrical characteristics of aluminum oxide (Al 2 O 3) MOS capacitors. Chemical changes after annealing have been characterized using the Fourier transform infrared spectroscopy prior to detailed electrical investigation. The influence of annealing temperature on electrical characteristics has been investigated by capacitance-voltage (C-V) and conductance-voltage (G/ ω-V) curves. Effective oxide trap density (N ox) , border trap densities (N bt) , and interface trap densities (N it) were calculated during the electrical analysis. Remarkable changes in the measurements were observed depending on the annealing temperatures. The obtained results demonstrate that the optimum annealing temperature is 450 • C for the Al 2 O 3-based devices.

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“…Nowadays, technological devices based on semiconductor materials provide many advantages [1]. Many studies have been published [2]- [5] that deal with improving sensor characteristics such as in radiation detection. To understand the mechanism behind sensor performance, different metal oxide materials have been investigated [6], [7].…”

Section: Introductionmentioning

confidence: 99%

INVESTIGATION OF ELECTRICAL CHARACTERISTICS AND SURFACE MORPHOLOGY OF VANADIUM OXIDE-VO₂ MOS DEVICES

Gürer¹,

Yılmaz²

2020

RAP Conference Proceedings

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In this study, the electrical characteristics and surface morphology of Vanadium Oxide-VO2 MOS Devices have been investigated. VO2 thin films were deposited onto n-type (100) silicon wafers by using the RF magnetron sputtering system. Thin films were annealed at different temperatures in the Argon environment. The FTIR and XRD measurements were performed to check the surface morphology, crystal structure and bond structures of VO2 thin films, respectively. Except from the sample that was annealed at 700°C, the VO2 thin films showed amorphous structure. In the ATR-FTIR analysis, V-O-V bending mode at 617 cm -1 and V=O stretching vibrations at 990 cm -1 were seen on vanadium oxide thin films. While analyzing the electrical characteristics, it has been noticed that annealing had effects on the C-V and G/w-V curves. The obtained results demonstrate that VO2 may have the potential to be used in MOS-based applications.

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A detailed study on the frequency-dependent electrical characteristics of Al/HfSiO4/p-Si MOS capacitors

Cited by 19 publications

References 36 publications

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er₂O₃/SiO₂/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er₂O₃/SiO₂/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM

Effects of annealing temperature on electrical characteristics of sputtered Al/Al 2 O 3 /p-Si (MOS) capacitors

INVESTIGATION OF ELECTRICAL CHARACTERISTICS AND SURFACE MORPHOLOGY OF VANADIUM OXIDE-VO₂ MOS DEVICES

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A detailed study on the frequency-dependent electrical characteristics of Al/HfSiO4/p-Si MOS capacitors

Cited by 19 publications

References 36 publications

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er2O3/SiO2/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er2O3/SiO2/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM

Effects of annealing temperature on electrical characteristics of sputtered Al/Al 2 O 3 /p-Si (MOS) capacitors

INVESTIGATION OF ELECTRICAL CHARACTERISTICS AND SURFACE MORPHOLOGY OF VANADIUM OXIDE-VO2 MOS DEVICES

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FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er₂O₃/SiO₂/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er₂O₃/SiO₂/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM

INVESTIGATION OF ELECTRICAL CHARACTERISTICS AND SURFACE MORPHOLOGY OF VANADIUM OXIDE-VO₂ MOS DEVICES