A design for a linear array PIN photodiode for use in a Computed mammo-Tomography (CmT) system

Park, Shin-Woong; Yuk, Sunwoo; Park, Jung-Byung; Ye, Yun

doi:10.1016/j.nima.2009.05.170

Cited by 5 publications

(2 citation statements)

References 7 publications

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“…Prete and Lovergine discussed dilute nitride III-V (III-N-V) semiconductor nanowires and the synthesis by bottomup (so-called self-assembly) method for application to novel and high efficiency intermediate-band solar cells [16]. Park et al proposed a PIN photodiode with low noise and high sensitivity [17]. The developed low-resistivity wafer photodiode has low leakage current, high capacitance and similar optical sensitivity in the gadolinium oxy-sulfide (GOS) range for x-ray radiation sensor scintillators [17].…”

Section: Introductionmentioning

confidence: 99%

“…Park et al proposed a PIN photodiode with low noise and high sensitivity [17]. The developed low-resistivity wafer photodiode has low leakage current, high capacitance and similar optical sensitivity in the gadolinium oxy-sulfide (GOS) range for x-ray radiation sensor scintillators [17]. Li et al reported on an integration method utilizing the flexibility of the atomically thin crystals and their physical subsidence in liquids, which enables reliable fabrication of the micro-patterned 2D materials/Si arrays.…”

Section: Introductionmentioning

confidence: 99%

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A novel photodiode array structure with double-layer SiO₂ isolation

Jiang

Zhang

Jiang

2023

Semicond. Sci. Technol.

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A novel photodiode array structure is proposed and implemented in the paper. Based on the SOI substrate, the structure adopts double SiO2 layers for isolation among PN junctions. Compared with incumbent photodiode arrays with a single isolation layer, the novel design shows less leakage current, less noise, high optical response sensitivity, and better compatible integration with other devices. The dark current of this structure is less than nanoamperes (10-9 A), with the benefits of 1000 times’ less leakage current than that of other structures, and a higher sensitivity with a response speed less than 200 ns. The device is fabricated and characterized. The doping concentration and structural profile are characterized. The fabricated device is packaged with a photo LED and the MOS device to act as the MOS relay driver. The wavelength used in the photodiode is between 500 nm-560 nm, with peak wavelength 520 nm, which can be used to drive MOS device.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%