A design approach for mass producible high-bit-rate MMIC transimpedance amplifiers

Abstract

A full design approach for developing very highspeed transimpedance amplifier (TIA) monolithic microwave integrated circuits (MMIC's) to be economically produced in large quantities is described. As an application example, the letter reports design, experimental performances, yield, and size data for a 5-Gb/s MMIC TIA using a low-cost 0.5-m GaAs field-effect transistor (FET) technology, showing outstanding experimental performances and optimized for a large-volume industrial production.

SiGe HBT mm-Wave DC Coupled Ultra-wide-band Low Noise Monolithic Amplifiers

“…We made use of the well know inductor peaking technique [3][4][5][6][32][33][34][35][36][37]]. An amplifier with bandwidth even more wide with small size and low power consumption is presented.…”

“…Successful efforts in this direction were made, in the past, by various components of our RF research team, by using relatively expensive III-V technologies, which take advantage from semi-insulating substrates for synthesizing on chip high Q passive circuit elements [1][2][3][4][5][6]. However, in spite of the design problems posed by the use of lossy Si substrates [7], the recent impressive advances of the high frequency performances of SiGe HBTs have disclosed much interesting perspectives for producing low cost microwave and mm-wave monolithic circuits with the additional attractive capability of a very high level mixed signal integration.…”