Low noise Si based monolithic transimpedance amplifiers for 10 Gbps, 40 Gbps and 100 Gbps applications

Ponchet, A. F.; Bastida, E.M.; Panepucci, Roberto R.; Swart, Jacobus W.

doi:10.1109/iccdcs.2014.7016156

Cited by 4 publications

(6 citation statements)

References 24 publications

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“…The proposed topology is a double cascode TIA with negative shunt-shunt feedback and inductive peaking techniques, optimized for very low noise performance [14][15][16][17]. Fig.…”

Section: The Proposed Circuit and Design Methodologymentioning

confidence: 99%

Analysis and Design of a Low Noise Shunt-Shunt CMOS Transimpedance Amplifier for 10 Gbps Optoelectronic Receivers

Ponchet¹,

Swart²,

Bastida³

et al. 2020

JICS

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This article presents a complete design flow of a low noise transimpedance amplifier for 10 Gbps optoelectronic receivers. The proposed topology is based on the shunt-shunt structure with negative feedback. A set of equations was deduced from the frequency analysis and noise analysis. An optimization algorithm is proposed in order to maximize the bandwidth and improve the noise performance simultaneously. Experimental results shown a 51 dBΩ transimpedance gain, a 10.54 Ghz bandwidth and an input referred current noise equal to 6.8, the lowest one between other state-of-art designs. The circuit was manufactured in 130 nm RF CMOS technology.

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“…The proposed topology is a double cascode TIA with negative shunt-shunt feedback and inductive peaking techniques, optimized for very low noise performance [14][15][16][17]. Fig.…”

Section: The Proposed Circuit and Design Methodologymentioning

confidence: 99%

Analysis and Design of a Low Noise Shunt-Shunt CMOS Transimpedance Amplifier for 10 Gbps Optoelectronic Receivers

Ponchet¹,

Swart²,

Bastida³

et al. 2020

JICS

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“…For these reasons we preferred to make use of a lumped element Darlington [23,24] circuit topology. This topology permits the achievement of a higher current gain cutoff frequency f t than each individual transistor, since it basically makes use of a proper HBT f t doubler technique [11,25]. Darlington topology is very compact and allows the design of very small size and low power consumption circuits, with an acceptable low noise performance [26].…”

Section: Inductor Less Darlington Ultra Wide Band Mm-wave Feedback Ammentioning

confidence: 99%

“…For transimpedance amplifiers [11,19,20], the optimization must be made as a function of the equivalent input noise current density, given in , and the transimpedance gain, derived from Sparameters:…”

Section: Inductor Less Darlington Ultra Wide Band Mm-wave Feedback Ammentioning

confidence: 99%

“…To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. [11,[20][21][22].…”

Section: Inductor Less Darlington Ultra Wide Band Mm-wave Feedback Ammentioning

confidence: 99%

“…These advances were basically due to the lateral and vertical shrinking of the devices dimensions and some innovative transistor fabrication systems for reducing parasitic resistances and capacitances [8,9,10]. So, mainly looking to very high bit rate optical links applications, we set up a full design approach for Si based monolithic transimpedance amplifiers where active devices layout optimization, mm-wave available connectivity solutions with the external circuitry and foundry selection criteria were also considered [11][12][13][14][15][16][17]. In this paper we will describe the full design of three ultra-wideband mm-wave d.c coupled SiGe HBT low noise monolithic amplifiers we developed for fabrication in Germany at the IHP foundry.…”

Section: Introductionmentioning

confidence: 99%

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SiGe HBT mm-Wave DC Coupled Ultra-wide-band Low Noise Monolithic Amplifiers

Ponchet

Bastida

Panepucci

et al. 2014

Proceedings of the 27th Symposium on Integrated Circuits and Systems Design

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Design guide lines are given for developing SiGe HBT mm-wave d.c. coupled ultra-wide-band low noise monolithic amplifiers. An ultra wide band LNA and two mm-wave TIAs for 40 Gbps and 100 Gbps applications are proposed. The LNA has S 21 =11 dB and a 3-dB bandwidth of 88 GHz. The 40 Gbps TIA has a new topology, allowing a DC coupled performance, 54 dBΩ transimpedance gain, 37 GHz bandwidth, consumes 59 mW power and its area is 0.23 mm 2 . The 100 Gbps TIA has 43 dBΩ transimpedance gain, 79.4 GHz bandwidth, consumes 37 mW power and its area is only 0.05 mm 2 . These amplifiers are implemented in a 0.12 µm SiGe HBT technology (f T = 350 GHz/f max = 450 GHz). Output eye diagram plots were obtained to verify their performances.

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Investigation of direct-coupled amplifier topologies for wireless communication systems using normally-on mHEMT technology

John

Merkle

Friesicke

et al. 2017

2017 IEEE MTT-S International Microwave Symposium (IMS)

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This paper presents direct-coupled DC-50 GHz two-stage baseband amplifier topologies realized in a 35nm gate-length InAlAs/InGaAs mHEMT technology. These are key components of future single-chip receiver MMICs for point-to-point communication systems. Three interstage coupling approaches are investigated: resistive coupling, a diode-level-shifter and a Kukielka amplifier. The Kukielka amplifier features the best performance in terms of gain-bandwidth-product and represents the state of the art for this topology. The investigated two-stage amplifier circuits achieve up to 21 dB gain and a 3 dB bandwidth of 53 GHz, requiring less than 300x300um2 chip area. The presented level-shifter circuit has a 3 dB bandwidth of up to 150 GHz and an insertion loss of less than 3.5 dB

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Low noise Si based monolithic transimpedance amplifiers for 10 Gbps, 40 Gbps and 100 Gbps applications

Cited by 4 publications

References 24 publications

Analysis and Design of a Low Noise Shunt-Shunt CMOS Transimpedance Amplifier for 10 Gbps Optoelectronic Receivers

Analysis and Design of a Low Noise Shunt-Shunt CMOS Transimpedance Amplifier for 10 Gbps Optoelectronic Receivers

SiGe HBT mm-Wave DC Coupled Ultra-wide-band Low Noise Monolithic Amplifiers

Investigation of direct-coupled amplifier topologies for wireless communication systems using normally-on mHEMT technology

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