A deep-trenched capacitor technology for 4 mega bit dynamic RAM

Yamada, K.; Yamabe, K.; Tsunashima, Y.; Imai, K.; Kashio, T.; Tango, H.

doi:10.1109/iedm.1985.191072

Cited by 19 publications

(10 citation statements)

References 5 publications

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“…17 and 18 were taken at the end of a complete process sequence (see Experimental section). Directly after drive-in, the surface concentrations were about a factor of five higher, an observation in agreement with published results (27).…”

Section: Influence Of Assg Thickness and Dopant Content--rais-supporting

confidence: 92%

“…17 as an Arrhenius plot. Directly after drive-in, the surface concentrations were about a factor of five higher, an observation in agreement with published results (27). This is necessary to exclude the influence of the As-Si phase formed at the interface under certain experimental conditions.…”

Section: Influence Of Drive-in Temperature and Time--accordingsupporting

confidence: 90%

“…For AsSG (2) the increase is even larger and amounts to 70% for 1000~ and 100% for 1050~ Since no crystal orientation dependence of diffusion in silicon is known for inert drive-in (40), the effect could stem from differences in interface penetrability, barrier formation, or oxidation enhanced diffusion during the rounding oxidation (27) used to improve the trench shape. For AsSG (2) the increase is even larger and amounts to 70% for 1000~ and 100% for 1050~ Since no crystal orientation dependence of diffusion in silicon is known for inert drive-in (40), the effect could stem from differences in interface penetrability, barrier formation, or oxidation enhanced diffusion during the rounding oxidation (27) used to improve the trench shape.…”

Section: Influence Of Drive-in Temperature and Time--accordingmentioning

confidence: 99%

“…Although the principal viability of several approaches has been established, a careful evaluation shows that only (27)(28)(29) High As concentrations difficult ( )*: No data for trench application a minor fraction thereof lend themselves to a productionoriented process. Due to the good step coverage of the films, the simplicity of the deposition, and the ease of integration into the existing process flow, the trench doping by AsSG was chosen as the most promising method.…”

mentioning

confidence: 99%

“…Consequently, the main interest in AsSG has always centered on its ability to act as a diffusion source for silicon . This method, which had generally been replaced by ion implantation, has found renewed interest recently (27) due to the implementation of trench technology in highly integrated circuits.…”

mentioning

confidence: 99%

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Low Pressure Deposition of Doped SiO2 by Pyrolysis of Tetraethylorthosilicate (TEOS): II . Arsenic Doped Films

Becker

Treichel

Rohl

1989

J. Electrochem. Soc.

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3033comes 100% when the detection tolerance (hp) is greater than 0.05 ~m, which corresponds to the value of the mark edge roughness. The detection repeatability of 0.02 ~tm can be obtained by averaging a number of detected registration signals. However, the overlay accuracy between optically printed patterns and the FIB exposed level is 0.11-0.13 ~m. It is thought that beam scan calibration, beam drift, or other errors of both the FIB and optical lithography systems restrict the overlay accuracy of this hybrid process. AcknowledgmentsThe authors are grateful to K. Shibayama of the LSI R&D Laboratory, and K. Fujikawa of the Optelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation, for continuous support and discussions. M. Ohtsubo, O. Ishihara, K. Nishitani, and K. Nagahama are also acknowledged for device design and processing. ABSTRACTArsenosilicate glass (AsSG) with dopant levels up to 15% was prepared using TEOS and triethoxiarsine (TEOA) or triethylarsenate (TEAs). The optimum deposition parameters and film properties like step coverage, uniformity, and particle densities correspond to the results obtained for undoped TEOS-SiO2. The different dissociation kinetics influence the way in which the arsenic is incorporated into the glass. Films prepared with TEAs are better diffusion sources because they do not tend to produce arsenic pile-up at the silicon surface. By heat-treating AsSG films with 6% As for 30-60 rain at 1000~ surface concentrations of >10 TM At cm -3 with junction depths below 200 nm are obtained on planar substrates. Slightly lower As concentrations are measured in trenches, an effect correlating with the different crystal orientations. Gate oxides grown on As diffused or undoped substrates show the same electrical qualities. By incorporating the AsSG trench doping into a complete process sequence, trench cell capacitors were produced and evaluated. The AsSG doping principle was found to be a safe and production-oriented process.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-06-05 to IP

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Section: Influence Of Assg Thickness and Dopant Content--rais-supporting

confidence: 92%

Section: Influence Of Drive-in Temperature and Time--accordingsupporting

confidence: 90%