A Deep Subelectron Temporal Noise CMOS Image Sensor With Adjustable Sinc-Type Filter to Achieve Photon-Counting Capability

Han, Liqiang; Theuwissen, Albert

doi:10.1109/lssc.2021.3089364

Cited by 5 publications

(3 citation statements)

References 8 publications

(19 reference statements)

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“…A similar pixel-level voltage amplification architecture was also reported in [51] and [69] with an additional column-level Fig. 8.…”

Section: B Non-sf High Cg Pixelsmentioning

confidence: 82%

“…The reference nodes, COM and VSL_REF, are connected in parallel among thousands of pixels that are simultaneously readout, which significantly increase the transistor size and reduce the temporal noise from the biasing transistors. This work realized 0.50e − rms read noise and an improved PRNU of 2.5% compared to the single-ended configuration used in [51] and [69], which suggests better uniformity of the CG across the pixels.…”

Section: B Non-sf High Cg Pixelsmentioning

confidence: 83%

“…A minimum read noise of 0.31e − rms and peak read noise of 0.42e − rms were reported. However, the sensors suffer from large pixel-to-pixel CG variations (e.g., 240-2200 μV/e − in [69]), which may limit the implementation of this technique in the applications that have strict requirements for PRNU.…”

Section: B Non-sf High Cg Pixelsmentioning

confidence: 99%

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Review of Quanta Image Sensors for Ultralow-Light Imaging

Ma¹,

Chan

Fossum

2022

IEEE Trans. Electron Devices

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The quanta image sensor (QIS) is a photoncounting image sensor that has been implemented using different electron devices, including impact ionizationgain devices, such as the single-photon avalanche detectors (SPADs), and low-capacitance, high conversion-gain devices, such as modified CMOS image sensors (CIS) with deep subelectron read noise and/or low noise readout signal chains. This article primarily focuses on CIS QIS, but recent progress of both types is addressed. Signal processing progress, such as denoising, critical to improving apparent signal-to-noise ratio, is also reviewed as an enabling coinnovation.Index Terms-CMOS image sensor (CIS), denoising, image quality, low-light sensor, photon-counting image sensor, quanta image sensor (QIS), subelectron read noise. I. INTRODUCTIONC OUNTING every photon is as sensitive as physics presently allows in measuring light. To count photons incident on the faceplate, optical losses must be minimized, detector quantum and collection efficiencies must be maximized, and detector dead times minimized. Measurement of ultralow quanta (light) flux using single photomultiplier tube (PMT) detector photon counting was suggested as early as the 1960s, e.g., [1]-[3]. A digital photon-counting image sensor using APDs was suggested by Nippon Hōsō Kyōkai (NHK) [4]. In 1996, a hybridized photon-counting image sensor readout integrated circuit (ROIC) was investigated by Jet Propulsion Laboratory (JPL) [5] and the first solid-state single-photon avalanche detector (SPAD) was introduced [6].

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“…A similar pixel-level voltage amplification architecture was also reported in [51] and [69] with an additional column-level Fig. 8.…”

Section: B Non-sf High Cg Pixelsmentioning

confidence: 82%

Section: B Non-sf High Cg Pixelsmentioning

confidence: 83%

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Review of Quanta Image Sensors for Ultralow-Light Imaging

Ma¹,

Chan

Fossum

2022

IEEE Trans. Electron Devices

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Design and application of D‐band bandpass filter based on 0.18 μm complementary metal oxide semiconductor process

Chung,

Lin,

Yang

et al. 2024

Micro & Optical Tech Letters

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This paper designs a bandpass filter for D‐band and 0.18 μm complementary metal oxide semiconductor (CMOS) process. The bandpass filter is composed of an inverted L‐shaped coupling microstrip line and a cross‐coupled resonator, and is coupled to produce two controlled transmission zeros. A defected ground structure is used to make a good impedance match. The designed filter has a 3 dB impedance bandwidth of 52 GHz (149–201 GHz) with a center frequency of 175 GHz and an insertion loss of 3.23 dB. The design of this paper is a CMOS 0.18 μm process capable of applying the D‐band bandpass filter with the advantages of lower insertion loss, broadband, and compact size.

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Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors

Boukhayma

Kraxner²,

Caizzone

et al. 2022

IEEE J. Electron Devices Soc.

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This paper compares two in-pixel source follower stage designs for low noise CMOS image sensors embedded both on a same 5 mm by 5 mm chip fabricated in a 180 nm CIS process. The presented chip embeds two pixel variants, one based on a body-effect-canceled thin oxide PMOS and the other embeds a native thick oxide NMOS. On the other hand they share the same sense node, same amplification circuit and 11 bit single slope analog to digital converter (SS-ADC). The imager characterization demonstrates a histogram peak noise of 0.34 e − RMS with the PMOS SF pixel and 0.47 e − RMS with the NMOS SF at maximum analog gain. This performance is obtained at room temperature and 119 frame per second. Both pixel variants demonstrate a full well capacity over 5600 electrons.

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A Deep Subelectron Temporal Noise CMOS Image Sensor With Adjustable Sinc-Type Filter to Achieve Photon-Counting Capability

Cited by 5 publications

References 8 publications

Review of Quanta Image Sensors for Ultralow-Light Imaging

Review of Quanta Image Sensors for Ultralow-Light Imaging

Design and application of D‐band bandpass filter based on 0.18 μm complementary metal oxide semiconductor process

Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors

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