A dechanneling investigation of MeV oxygen implanted silicon

Formation of Conducting and Insulating Layered Structures in Si by Ion Implantation: Process Control Using FTIR Spectroscopy

“…The large penetration depth ͑in the order of hundreds of micrometers in Si͒ of infrared ͑IR͒ radiation, enables even the thickest of the samples produced by ion implantation to be evaluated without the need for beveling. 11,12 Moreover, the strong interaction of IR radiation with atomic vibrations and free carriers enables: ͑i͒ the investigation of the nature of the formed silicon oxide ͑stoichiometry and stress͒ in SIMOX structures and ͑ii͒ in the case of intentional doping the evaluation of crystallinity, dopant redistribution, and electrical and transport properties ͑free carrier density, activation and mobility͒ in the Si overlayer of SIMOX as well as in bulk Si. [13][14][15][16] The whole process of the fabrication of annealed electrically activated doped Si and SIMOX structures is monitored step by step in this paper, beginning from bare silicon, using FTIR spectroscopy.…”