A DC-to-108-GHz CMOS SOI Distributed Power Amplifier and Modulator Driver Leveraging Multi-Drive Complementary Stacked Cells

El-Aassar, Omar; Rebeiz, Gabriel M.

doi:10.1109/jssc.2019.2941013

Cited by 40 publications

(7 citation statements)

References 46 publications

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“…Furthermore, distributed amplifier natively has wide bandwidth compared to lumped amplifier. Many works based on distributed amplifier structure have been reported, such as [65,155,163,[168][169][170][171][172][173][174], and [142]. The lumped driver is easy to implement but has limited bandwidth and modulation format.…”

Section: Current and Future Challengesmentioning

confidence: 99%

Co-packaged optics (CPO): status, challenges, and solutions

Tan

Liu³

et al. 2023

Front. Optoelectron.

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Due to the rise of 5G, IoT, AI, and high-performance computing applications, datacenter traffic has grown at a compound annual growth rate of nearly 30%. Furthermore, nearly three-fourths of the datacenter traffic resides within datacenters. The conventional pluggable optics increases at a much slower rate than that of datacenter traffic. The gap between application requirements and the capability of conventional pluggable optics keeps increasing, a trend that is unsustainable. Co-packaged optics (CPO) is a disruptive approach to increasing the interconnecting bandwidth density and energy efficiency by dramatically shortening the electrical link length through advanced packaging and co-optimization of electronics and photonics. CPO is widely regarded as a promising solution for future datacenter interconnections, and silicon platform is the most promising platform for large-scale integration. Leading international companies (e.g., Intel, Broadcom and IBM) have heavily investigated in CPO technology, an inter-disciplinary research field that involves photonic devices, integrated circuits design, packaging, photonic device modeling, electronic-photonic co-simulation, applications, and standardization. This review aims to provide the readers a comprehensive overview of the state-of-the-art progress of CPO in silicon platform, identify the key challenges, and point out the potential solutions, hoping to encourage collaboration between different research fields to accelerate the development of CPO technology. Graphical Abstract

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Section: Current and Future Challengesmentioning

confidence: 99%

Co-packaged optics (CPO): status, challenges, and solutions

Tan

Liu³

et al. 2023

Front. Optoelectron.

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“…These characteristics meet the requirements. Some distributed modulator drivers reached bandwidths of nearly 100 GHz [1]− [3]. Recently, distributed drivers were also developed for quantum key transfer systems [4].…”

Section: Introductionmentioning

confidence: 99%

A Compact Fully-Differential Distributed Amplifier with Coupled Inductors in 0.18-µm CMOS Technology

Kawahara

UMEDA

TAKANO

et al. 2023

IEICE Trans. Electron.

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This paper presents a compact fully-differential distributed amplifier using a coupled inductor. Differential distributed amplifiers are widely required in optical communication systems. Most of the distributed amplifiers reported in the past are single-ended or pseudo-differential topologies. In addition, the differential distributed amplifiers require many inductors, which increases the silicon cost. In this study, we use differentially coupled inductors to reduce the chip area to less than half and eliminate the difficulties in layout design. The challenge in using coupled inductors is the capacitive parasitic coupling that degrades the flatness of frequency response. To address this challenge, the odd-mode image parameters of a differential artificial transmission line are derived using a simple loss-less model. Based on the analytical results, we optimize the dimensions of the inductor with the gradient descent algorithm to achieve accurate impedance matching and phase matching. The amplifier was fabricated in 0.18-μm CMOS technology. The core area of the amplifier is 0.27 mm 2 , which is 57% smaller than the previous work. Besides, we demonstrated a small group delay variation of ±2.7 ps thanks to the optimization. the amplifier successfully performed 30-Gbps NRZ and PAM4 transmissions with superior jitter performance. The proposed technique will promote the highdensity integration of differential traveling wave devices.

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“…This comes, however, at the price of a limited BW of less than 200 GHz. MMICs based on CMOS technologies demonstrate P out of up to 23 dBm, whereas the BW does not exceed 120 GHz [10], [12]. Since state-of-the-art results are mainly based on HBT technologies, the demonstrated noise figures (NFs) are prone to be higher than values one would expect for high-electron-mobilitytransistor-based (HEMT) solutions.…”

Section: Introductionmentioning

confidence: 99%

First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth

Thome

Leuther

2021

IEEE J. Solid-State Circuits

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This article reports on the first demonstration of distributed amplifier monolithic microwave integrated circuits (MMICs) with a bandwidth (BW) of more than 300 GHz. The three presented circuits utilize a uniform traveling-wave amplifier topology with six, eight, and ten unit cells, respectively. In this article, the impact of the connection between the gate line and the transistors on the achievable performance is investigated. It is demonstrated that a short connection clearly provides a more favorable combination of BW, input matching, and losses on the gate line. Thus, it is possible to extend the BW beyond 300 GHz while utilizing transistors with a gate width of 2 × 10 µm. The MMICs are fabricated in a 35-nm gate-length InGaAs metamorphic high-electron-mobility transistor technology. The MMIC with six unit cells exhibits a noise figure (NF) between 3.5 and 8.2 dB for a noise-optimized bias from 1 GHz up to the measurement limit of 308 GHz. The MMIC with ten unit cells achieves a minimum NF of 2 dB for frequencies of around 50 GHz and stays below 10 dB for the entire band. Furthermore, for a power-optimized bias, the same circuit generates an output power between 8.7 and 14.8 dBm for a frequency range from 1 to 250 GHz.

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A DC-to-108-GHz CMOS SOI Distributed Power Amplifier and Modulator Driver Leveraging Multi-Drive Complementary Stacked Cells

Cited by 40 publications

References 46 publications

Co-packaged optics (CPO): status, challenges, and solutions

Co-packaged optics (CPO): status, challenges, and solutions

A Compact Fully-Differential Distributed Amplifier with Coupled Inductors in 0.18-µm CMOS Technology

First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth

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