A DC-12 GHz monolithic GaAsFET distributed amplifier

Strid, E.W.; Gleason, K.R.

doi:10.1109/t-ed.1982.20835

Cited by 16 publications

(8 citation statements)

References 11 publications

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“…The heightened activity in GaAs microwave IC design activity would stimulate the development of the microwave wafer probe based on the tapered coplanar waveguide [16]. It is safe to say that the wide use of this probe quickened the pace of MMIC development everywhere.…”

Section: The Age Of Gaas Mmicsmentioning

confidence: 99%

CMOS microwave and millimeter-wave ICs: The historical background

Abidi

2014

2014 IEEE International Symposium on Radio-Frequency Integration Technology

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Fully integrated microwave IC's have been in development since the 1970s. The move in recent years to complex microwave and millimeter-wave CMOS subsystems has prompted a considerable activity which must proceed in light of past developments and discoveries. This paper offers a perspective on pre-CMOS experience with active microwave circuits on a chip, some of which operated at 60 GHz.While a market for millimeter-wave consumer devices has yet to mature, there is enough research at hand to show that millimeter-wave electronics are feasible in the 60 to 77 GHz in state-of-the-art CMOS technology. It seems likely-or at least so the thinking goes-that the very existence of functional CMOS electronics, even antennas, which can be integrated with digital signal processing should pry open applications that lay dormant because of high cost. But millimeter-wave CMOS is not a straightforward extrapolation of RF-CMOS circuit design; it is a different circuit approach altogether, with roots that run much deeper than RF-CMOS. It is my purpose here to bring to light some of this history.

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Section: The Age Of Gaas Mmicsmentioning

confidence: 99%

CMOS microwave and millimeter-wave ICs: The historical background

Abidi

2014

2014 IEEE International Symposium on Radio-Frequency Integration Technology

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“…To our understanding, [13] and [14] provided a real breakthrough in probe technology. The basic requirements and operation principles of an RF probe were defined, and, since then, the following have come to be seen as common rules for decades:…”

Section: First Stepsmentioning

confidence: 99%

“…With transferring the probe design from microstrip to the coplanar waveguide (CPW), the probes became very simple to fabricate ( Figure 2) [15]. Tektronix finally transformed probes from a "do-it-yourself" tool to a real product for the evolving RF semiconductor industry ( Figure 3) [14]. This heralded the beginning of the wafer-level RF measurements era.…”

Section: First Stepsmentioning

confidence: 99%

RF Probe Technology: History and Selected Topics

Rumiantsev

Doerner

2013

IEEE Microwave

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“…Since available computer programs provide the means to optimize each circuit element for desired performance, a new concept using individually optimized devices can easily be established. The feasibility of the new design method is demonstrated on a 2 to 26·5 GHz distributed amplifier with a 15dB flat band gain and a 20GHz cut-off frequency (Prasad et al 1988, Niclas et al 1983, Beyer et al 1984, Deibele and Beyer 1989, Strid and Gleason 1982, Vai and Prasad 1990). …”

Section: The Fet Distributed Amplifiermentioning

confidence: 99%

Review of microwave distributed superconducting vortex-flow transistor amplifiers

Yalamanchili

Qiu

1992

International Journal of Electronics

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The dynamics of fluxons in the vortex flow transistor (VFT) has been much studied. The fluxon transit time determines the fundamental speed limit of operation. Since fluxons can travel at the velocity of electromagnetic waves in the junction, the VFT has the potential for operating in high frequency systems ('" 100 GHz). However, owing to the low input and output impedance of the VFT, use of the device in a conventional circuit would be quite limited. A distributed amplifier configuration consisting of many VFTs has been proposed to remedy the problems of low impedance levels. However, the realization of such an amplifier circuit at microwave or millimetre wave frequencies depends on obtaining a circuit model. In this paper, microwave superconducting VFT distributed amplifiers using the balanced control technique is reviewed. This kind of amplifier has the advantage that the capacitive feedthrough effect is decreased to a negligible extent. This is the major limiting factor for high frequency applications. The self-field effect which makes the current step inclined is reduced by injecting bias current only around the region of one end of the junction thus obtaining steeper 1-V characteristics. With the asymmetric geometry, the slope of the current step is about one hundred times steeper than those obtained with the conventional overlap geometry. Owing to the diamagnetic behaviour of the Josephson junction, a little of the magnetic field induced by the current in the control line is allowed to penetrate the junction. Thus, the transresistance rm of a VFT is very small. Some methods for maximizing r., and minimizing the output impedance r., also appear in this review. The feasibility of fabricating VFT distributed amplifiers using low-1;, superconducting material has been demonstrated. The power gain of the amplifier can be as high as 15dB with a flat frequency response. NotationI length of the junction c electromagnetic wave velocity in the junction v velocity of fluxon <1>0 flux quantum 4> phase difference between the two electrodes <1> magnetic flux J 0 maximum Josephson current (critical current) density 1 0 maximum Josephson current (critical current) I b bias current J b bias current density I m maximum microwave signal current I total tunnelling current Ie current in control line

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A DC-12 GHz monolithic GaAsFET distributed amplifier

Cited by 16 publications

References 11 publications

CMOS microwave and millimeter-wave ICs: The historical background

CMOS microwave and millimeter-wave ICs: The historical background

RF Probe Technology: History and Selected Topics

Review of microwave distributed superconducting vortex-flow transistor amplifiers

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