This paper describes a nano-scale tensile test to study the fatigue properties of LPCVD silicon nitride thin films using a novel electrostatic actuator design. Mechanical-amplifier devices made in silicon nitride thin films can apply controllable tensile stress (2.0-7.8 GPa) to test structures with relatively low actuation voltages (5.7-35.4 V RMS) at the resonant frequencies of the devices. The test devices are fabricated using a surface micromachining technique in combination with deep reactive ion etching and ion milling. With the recently developed experimental techniques inside a focused-ion-beam system, in situ fatigue measurements are performed on silicon nitride test structures with beam widths of 200 nm. The silicon nitride test structures are found to exhibit time-delayed failures with continuous increases in their compliance. By reducing the applied tensile stress to 3.8 GPa, the test structures can survive cyclic loadings up to 10 8 cycles.