A Cross-Coupled Ka-Band GaAs-pHEMT Based VCO

Abstract

Abstract.A cross-coupled GaAs pseudomorphic high electron mobility transistor (pHEMT) based Ka-band voltage-controlled oscillator (VCO) is reported in this work, by using commercial OMMIC 0.13 μm depletion-mode power pHEMT (D01PH) process. The simulation of the proposed VCO demonstrates an operating frequency range from 28.54 GHz to 32.44 GHz with the tuning range of 12.8%, an output power from 15.2 dBm to 15.9 dBm, total dc power consumption of 124 mW and power efficiency from 27.2% to 31.9%. The simulated phase noise is from -105.7 dBc/Hz to -100.4 dBc/Hz at 1 MHz offset frequency and the figure-of-merit (FoM) is -207.4 dBc/Hz at the center frequency of 30.3 GHz.