A Compact RTD-Based Push-Push Oscillator Using a Symmetrical Spiral Inductor

Lee, Ki-Won; Jeong, Yongrok

doi:10.1587/transele.2020ecs6003

Cited by 1 publication

(1 citation statement)

References 11 publications

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“…In the last few years, terahertz (THz) emission sources have been the subject of much research thanks to their many applications in various sectors such as information and communication technology [1], radar and security [2], and medical sciences [3]. Resonant tunneling diodes (RTDs), with their high cut-off frequency and excellent output power performance, present a promising candidate for THz sources [4].…”

Section: Introductionmentioning

confidence: 99%

Quantum well width and barrier Thickness effects on the perpendicular transport in polar and non-polar oriented AlGaN/GaN Resonant Tunneling Diodes

Kacem

Bhouri

Lazzari

et al. 2021

2021 IEEE International Conference on Design &Amp; Test of Integrated Micro &Amp; Nano-Systems (DTS)

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In this study, we theoretically investigated the electronic properties of resonant tunneling diodes (RTDs) grown along the polar and non-polar orientations by using the self-consistent solution of the coupled Schrödinger and Poisson equations. Based on the transfer matrix formalism, the effects of the geometrical parameters on the current-voltage characteristics of Al0.2Ga0.8N/GaN RTDs we analyzed by varying GaN well width and Al0.2Ga0.8N/GaN barrier thicknesses. The results show that the characteristics of polar and nonpolar Al0.2Ga0.8 N/GaN RTD strongly depend on the barrier and well size; showing a strong decrease in peak and valley current density and a large PVR enhancement when increasing well and barrier thickness. To bring interesting RTD electrical characteristics, a comparison between the polar and non-polar Al0.2 Ga0.8N/GaN RTD was performed. non-polar oriented RTDs show better electronic characteristics, including higher peak current density ( ), smaller peak voltage ( peak), and greater pic-to-valley ratio (PVR), than polar ones

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