A cost-effective 0.25 μm L/sub eff/ BiCMOS technology featuring graded-channel CMOS (GCMOS) and a quasi-self-aligned (QSA) NPN for RF wireless applications

Simulation of oxide trapping noise in submicron n-channel MOSFETs

“…3. As expected, the oxide-trapping noise with the oxide trap density modeled by (17) shows pure noise with a corner frequency in the MHz range.…”

“…Past research [10] shows that varies in position and energy. Celik and Hsiang [11] observed from n-channel MOSFETs operating in strong inversion, (17) where is the trap density at midgap in the oxide, represents distance into the oxide, and is a fitting parameter that describes the curvature of a U-shaped distribution of the defect density in energy. The first term in the exponent is from (1).…”

“…As a first step the noise simulation is compared with the analytical expression for noise in MOSFETs to determine the accuracy of the simulation tool. In FLOODS, the oxide defect density can be specified in the form of (17) or (18). Thus, if the FLOODS input parameters for noise simulation are properly adjusted to include only the physics that was considered in Celik and Hsiang's [5] derivation, comparisons between the FLOODS simulation outcome and their analytical predictions can be made.…”

“…Motorola provided measured data of a production BiCMOS technology with an effective channel length of 0.25 m [17]. A graded n-channel MOS (GCNMOS) transistor [18] with a geometric channel length of 0.45 m was analyzed for this paper.…”