A contrivance of 277 nm DUV LD with B0.313Ga0.687N/B0.40Ga0.60N QWs and AlxGa1–xN heterojunction grown on AlN substrate

Niass, Mussaab I.; Sharif, Muhammad Nawaz; Wang, Yifu; Lu, Zhengqian; Chen, Xue; Qu, Yipu; Du, Zhongqiu; Wang, Fang; Liu, Yuhuai

doi:10.1088/1674-4926/40/12/122802

Cited by 15 publications

(4 citation statements)

References 12 publications

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“…Shockley-Read-Hall recombination life time for n-type and p-type material and Auger recombination coefficient are set to be 100ns and 1.0 × 10 −46 m 6 s −1 respectively. Other material parameters of AlGaN are calculated using GaN and AlN material parameters [34].…”

Section: Device Structurementioning

confidence: 99%

The effects of AlGaN quantum barriers on carrier flow in deep ultraviolet nanowire laser diode

Sharif

Niass

Liou

et al. 2021

Semicond. Sci. Technol.

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Aluminium (Al) composition is a critical parameter of performance for deep ultraviolet (DUV) AlGaN devices. In multiple-quantum-wells (MQW) nanowire laser diode, quantum barriers play an important role in carriers’ flow (electrons, holes). In this work, the impact of composition, and the thickness of AlGaN-based quantum barriers is being studied. The study suggests that by properly increasing Al composition of A l x G a 1 − x N quantum barriers, the height of the conduction band barrier decreases, which enhances electron leakage from MQW, while increasing the height of the valance band barrier, which, in turn, suppresses hole injection efficiency toward MQW. Such variations in band height greatly affect opto-electronic characteristics and performance of AlGaN nanowire. Furthermore, the study also suggests that quantum barrier thickness has much influence on DUV nanowire performance. The decrease in thickness of quantum barriers has little effect on confinement of the optical field, but significant effect on optical emitted power. It is found that by decreasing the thickness of quantum barriers, optical emitted power along with stimulated recombination rate is reduced. Contrastingly, as the thickness of quantum barriers increases, hole injection efficiency gets enhanced while electron leakage from MQW gets reduced. The above observations suggest that the higher the thickness of quantum barriers, the better the carriers’ flow toward MQW and hence, the performance is improved.

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Section: Device Structurementioning

confidence: 99%

The effects of AlGaN quantum barriers on carrier flow in deep ultraviolet nanowire laser diode

Sharif

Niass

Liou

et al. 2021

Semicond. Sci. Technol.

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“…Ionization energy of p-type Mg-doped Al x Ga 1-x N (0x1) scales linearly from 170 to 670 meV [45]. Other materials parameters like deformation potential, conduction band masses, etc can be found elsewhere [46]. All simulations are carried out at 300 K temperature.…”

Section: Device Structurementioning

confidence: 99%

Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer

Sharif¹,

Usman²,

Niass³

et al. 2021

Nanotechnology

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The electron blocking layer (EBL) plays a vital role in blocking the electron overflow from an active region in the AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED). Besides the blocking of electron overflow, EBL reduces hole injection toward the active region. In this work, we proposed a DUV nanowire (NW) LED structure without EBL by replacing it with a compositionally continuous graded hole source layer (HSL). Our proposed graded HSL without EBL provides a better electron blocking effect and enhanced hole injection efficiency. As a result, optical power is improved by 48% and series resistance is reduced by 50% with 4.8 V threshold voltage. Moreover, graded HSL without EBL offer reduced electric field within the active region, which leads to a significant increment in radiative recombination rate and enhancement of spontaneous emission by 34% at 254 nm wavelength, as a result, 52% maximum internal quantum efficiency with 24% efficiency drop is reported.

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“…The high defect density of AlN and AlGaN material, and low hole concentration in p-type AlGaN cladding layer are the main limiting factors. In 2019, Amano's group and Asahi Kasei Corporation cooperated to achieve the 271.8 nm UVC LD successfully by using distributed polarization doping (DPD) approach to achieve hole conductivity and injection [7] . This was the first UVC electrically injected LD in the world.…”

Section: Introductionmentioning

confidence: 99%

GaN based ultraviolet laser diodes

Yang,

Zhao,

Liu

et al. 2024

J. Semicond.

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In the past few years, many groups have focused on the research and development of GaN-based ultraviolet laser diodes (UV LDs). Great progresses have been achieved even though many challenges exist. In this article, we analyze the challenges of developing GaN-based ultraviolet laser diodes, and the approaches to improve the performance of ultraviolet laser diode are reviewed. With these techniques, room temperature (RT) pulsed oscillation of AlGaN UVA (ultraviolet A) LD has been realized, with a lasing wavelength of 357.9 nm. Combining with the suppression of thermal effect, the high output power of 3.8 W UV LD with a lasing wavelength of 386.5 nm was also fabricated.

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A contrivance of 277 nm DUV LD with B_0.313Ga_0.687N/B_0.40Ga_0.60N QWs and Al_xGa_1–xN heterojunction grown on AlN substrate

Cited by 15 publications

References 12 publications

The effects of AlGaN quantum barriers on carrier flow in deep ultraviolet nanowire laser diode

The effects of AlGaN quantum barriers on carrier flow in deep ultraviolet nanowire laser diode

Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer

GaN based ultraviolet laser diodes

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