A constant Q-factor notch filter using voltage difference transconductance amplifier

Roja, K.; Santhoshini, K. Malathi; Musala, Sarada; Srinivasulu, Avireni

doi:10.1016/j.ssel.2019.05.001

Cited by 2 publications

(2 citation statements)

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“…A Q = 20 was also achieved in [29]; nevertheless, a third order approach was used and hence the circuit possesses a steeper slope (20 dB/Dec sharper). Otherwise, the notch depth reported in [28][29][30] is optimistic; even with a very narrowband like those in [31], the achieved rejection barely surpasses the −20 dB. Thus, the −17 dB accomplished by the two circuit topologies described here is more realistic; it is not uncommon to have RF jammer filters with a notch depth barely larger than −10 dB.…”

Section: Post Layout Simulationmentioning

confidence: 79%

“…The attained results are summarized in Table 1 along with some other state-of-the-art band-stop filters. From those, the proposals [28][29][30] report simulation results based on CMOS circuits, whereas approach [31] accounts for experimental results based on lumped resonators. The latter is the filter whose center frequency, f 0 , is the larger, closely followed by the biquad and FDNR filters presented in this work.…”

Section: Post Layout Simulationmentioning

confidence: 99%

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CMOS Analog Filter Design for Very High Frequency Applications

et al. 2020

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A design strategy for the synthesis of high-selectivity/low-order analog filters in Complementary Metal-Oxide-Semiconductor (CMOS) technology for very high frequency (VHF) applications is presented. The methodology for the reconstitution of a given transfer function by means of Signal Flow Graphs (SFG) manipulation in canonical form is proposed leading to a fully differential g m -C biquad filter. As a practical example, the design of a notch filter intended to suppress interferers in the lower sideband (400 MHz) of the Medical Implant Communication Service (MICS), in single-poly, 6-metal layers; Mixed-Signal/RF 0.18 µm CMOS technology is realized. To compare the performance of the proposal with some other solution, the design of a 7th order elliptic notch filter based on Frequency Dependent Negative Resistors (FDNRs) was also accomplished. The attained simulation results prove that the proposal is competitive compared to the FDNR solution and some other state-of-the-art filters reported in the literature. The most salient features of the proposed notch biquad include: the selectivity, whose value is comparable to that of a 7th order elliptic approach and some other 3rd order filters; a high-frequency operation without resonators; linearity, with a +15 dBm I I P 3 ; a reduced form factor with a total occupied area of 0.004282 mm2 and mostly a low design complexity.

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