A concise way to estimate the average density of interface states in an ITO–SiO x /n-Si heterojunction solar cell

Li, Y.; Han, Baichao; Gao, Ming; Yang, Jie; Du, Haiyan; Ma, Zhongquan

doi:10.1016/j.apsusc.2017.04.122

Cited by 8 publications

(3 citation statements)

References 31 publications

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“…In recent years, we devoted to researching advanced electronic materials as the hole-selective passivation layer of the indium tin oxide (ITO)/n-Si structure solar cell. − Fortunately, the accompanying a-SiO x (In) layer was formed during sputtering of ITO film on the n-Si substrate, which played multiple roles including induced inversion layer, interface passivation, hole selective, and hole tunneling. , The ITO/n-Si solar cell obtained a V oc of 540 mV and an efficiency of 12.2%. However, the V oc was limited by a built-in field, which was essentially confined by the work-function difference between ITO (5.06 eV) film and n-Si (4.31 eV) bulk .…”

Section: Introductionmentioning

confidence: 99%

Bifunctional Hybrid a-SiO_x(Mo) Layer for Hole-Selective and Interface Passivation of Highly Efficient MoO_x/a-SiO_x(Mo)/n-Si Heterojunction Photovoltaic Device

Gao

Chen

Han

et al. 2018

ACS Appl. Mater. Interfaces

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The promising n-Si-based solar cell is constructed for the purpose of realizing hole- and electron-selective passivating contact, using a textured front indium tin oxide/MoO structure and a planar rear a-SiO/poly(Si(n)) structure severally. The simple MoO /n-Si heterojunction device obtains an efficiency of 16.7%. It is found that the accompanying ternary hybrid SiO(Mo) interlayer (3.5-4.0 nm) is formed at the MoO /n-Si boundary zone without preoxidation and is of amorphous structure, which is determined by a high-resolution transmission electron microscope with energy-dispersive X-ray spectroscopy mapping. The creation of lower-oxidation states in MoO film indicates that the gradient distribution of SiO with Mo element occurs within the interlayer, acting as a passivation of silicon substrate, which is revealed by X-ray photoelectron spectroscopy with depth etching. Specifically, calculations by density functional theory manifest that there are two half-filled levels (localized states) and three unoccupied levels (extended states) relating to Mo component in the ternary hybrid a-SiO(Mo) interlayer, which play the roles of defect-assisted tunneling and direct tunneling for photogenerated holes, respectively. The transport process of photogenerated holes in the MoO /n-Si heterojunction device is well-described by the tunnel-recombination model. Meanwhile, the a-SiO/poly(Si(n)) has been assembled on the rear of the device for direct tunneling of photoinduced electrons and blocking photoinduced holes.

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Section: Introductionmentioning

confidence: 99%

Bifunctional Hybrid a-SiO_x(Mo) Layer for Hole-Selective and Interface Passivation of Highly Efficient MoO_x/a-SiO_x(Mo)/n-Si Heterojunction Photovoltaic Device

Gao

Chen

Han

et al. 2018

ACS Appl. Mater. Interfaces

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“…The clarification of the interfacial physical mechanism of the MSHJ solar cells enabled a better understanding of the nature of device physics. We investigated an a-SiO x (In) interlayer that formed naturally between ITO and an n-Si substrate [17,22,[25][26][27] during the growth of an ITO film on an n-Si wafer. The a-SiO x (In) interlayer also played multiple roles in the ITO/n-Si heterojunction solar cell and helped produce an outstanding photovoltaic performance.…”

Section: Resultsmentioning

confidence: 99%

“…Moreover, the reflection and the absorption at the front surface were extracted from data measured with an ultraviolet-visible spectrophotometer. The average density of state for the interfacial layer was set to 1:2 × 10 11 eV −1 ‧cm −2 , which was measured with the special cyclic voltammetry technique reported in our previous work [17]. Carrier transport across the a-SiO x (Mo)/c-Si interface was described by a thermionic emission model with active tunneling at the interface.…”

Section: Simulation Modelmentioning

confidence: 99%

Role of Interfacial Oxide Layer in MoOx/n-Si Heterojunction Solar Cells

Song

Huang

Gao

et al. 2021

International Journal of Photoenergy

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Interfacial oxide layer plays a crucial role in a MoOx/ n -Si heterojunction (MSHJ) solar cell; however, the nature of this interfacial layer is not yet clarified. In this study, based on the experimental results, we theoretically analyzed the role of the interfacial oxide layer in the charge carrier transport of the MSHJ device. The interfacial oxide layer is regarded as two layers: a quasi p -type semiconductor interfacial oxide layer (SiOx(Mo))1 in which numerous negatively charged centers existed due to oxygen vacancies and molybdenum–ion-correlated ternary hybrids and a buffer layer (SiOx(Mo))2 in which the quantity of Si-O bonds was dominated by relatively good passivation. The thickness of (SiOx(Mo))1 and the thickness of (SiOx(Mo))2 were about 2.0 nm and 1.5 nm, respectively. The simulation results revealed that the quasi p -type layer behaved as a semiconductor material with a wide band gap of 2.30 eV, facilitating the transport of holes for negatively charged centers. Additionally, the buffer layer with an optical band gap of 1.90 eV played a crucial role in passivation in the MoOx/ n -Si devices. Furthermore, the negative charge centers in the interfacial layer had dual functions in both the field passivation and the tunneling processes. Combined with the experimental results, our model clarifies the interfacial physics and the mechanism of carrier transport for an MSHJ solar cell and provides an effective way to the high efficiency of MSHJ solar cells.

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Advancement and Challenges for Schottkey Barrier MIS/SIS Solar Cells: A Review

Dasgupta

Chowdhury²,

Mondal

et al. 2021

Trans Indian Natl. Acad. Eng.

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A concise way to estimate the average density of interface states in an ITO–SiO x /n-Si heterojunction solar cell

Cited by 8 publications

References 31 publications

Bifunctional Hybrid a-SiO_x(Mo) Layer for Hole-Selective and Interface Passivation of Highly Efficient MoO_x/a-SiO_x(Mo)/n-Si Heterojunction Photovoltaic Device

Bifunctional Hybrid a-SiO_x(Mo) Layer for Hole-Selective and Interface Passivation of Highly Efficient MoO_x/a-SiO_x(Mo)/n-Si Heterojunction Photovoltaic Device

Role of Interfacial Oxide Layer in MoOx/n-Si Heterojunction Solar Cells

Advancement and Challenges for Schottkey Barrier MIS/SIS Solar Cells: A Review

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A concise way to estimate the average density of interface states in an ITO–SiO x /n-Si heterojunction solar cell

Cited by 8 publications

References 31 publications

Bifunctional Hybrid a-SiOx(Mo) Layer for Hole-Selective and Interface Passivation of Highly Efficient MoOx/a-SiOx(Mo)/n-Si Heterojunction Photovoltaic Device

Bifunctional Hybrid a-SiOx(Mo) Layer for Hole-Selective and Interface Passivation of Highly Efficient MoOx/a-SiOx(Mo)/n-Si Heterojunction Photovoltaic Device

Role of Interfacial Oxide Layer in MoOx/n-Si Heterojunction Solar Cells

Advancement and Challenges for Schottkey Barrier MIS/SIS Solar Cells: A Review

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Bifunctional Hybrid a-SiO_x(Mo) Layer for Hole-Selective and Interface Passivation of Highly Efficient MoO_x/a-SiO_x(Mo)/n-Si Heterojunction Photovoltaic Device

Bifunctional Hybrid a-SiO_x(Mo) Layer for Hole-Selective and Interface Passivation of Highly Efficient MoO_x/a-SiO_x(Mo)/n-Si Heterojunction Photovoltaic Device