A computationally efficient ion implantation damage model and its application to multiple implant simulations

Wang, G.; Tian, Shijie; Morris, Michael; Obradovic, B.; Balamurugan, Ganesh; Tasch, A.F.; Morris, Steve; Kennel, H. W.; Packan, P.; Magee, C. W.; Sheng, Jack; Lowther, R.; Linn, J. H.; Snell, C.M.

doi:10.1109/tcad.1996.6449170

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2007

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“…The spatially separated Frenkel pairs introduce an excess vacancy rich region near the surface and an excess interstitials rich region near the implanted tail. TRIM (26) and UT-MARLOWE (27) implantation simulations indicate that the Si + pre-implantation generates a projected range of about 18 nm. A distribution of excess vacancies is available from the surface to about 12 nm.…”

Section: Depth (Nm)mentioning

confidence: 97%

Formation of Silicided Hyper-Shallow p+/n- Junctions by Pulsed Laser Annealing

Pey

Ong²,

Lee³

et al. 2007

ECS Trans.

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In this invited talk, we first review various methods for the formation of p+/n junctions of depth of less than 40nm using excimer pulsed laser annealing technique of 248nm wavelength. The characteristics of junctions formed using single and multiple-pulsed shallow melt and non-melt laser annealing on amorphous and single crystalline Si substrate would be compared. To overcome the defect-related enhanced diffusion during pulsed laser annealing, novel junction engineering methodology using implantation generated defects such vacancies is illustrated. Methods employing ultra-low energy implants with laser annealing for junctions less than 25 nm are proposed. In addition, we will also talk briefly about the potential application of the laser annealing to be used for an ultra-low thermal budget silicide formation.

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Section: Depth (Nm)mentioning

confidence: 97%