A comprehensive study on the mechanism behind formation and depletion of Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) phases

Ahmad, Rameez; Brandl, Marco; Distaso, Monica; Herre, Patrick; Spiecker, Erdmann; Hock, Rainer

doi:10.1039/c5ce00661a

Cited by 38 publications

(28 citation statements)

References 56 publications

(111 reference statements)

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“…The coexistence of mixed crystals of orthorhombic and tetragonal structure in CZGS may also affect GIXRD spectra of CZGTS. Wurtzite CZGS or CZTS can be present in stacking faults of KS phase . The broad peak may also be due to small agglomerates of wurtzite ZnS, but this effect cannot be observed in Raman spectrum of precursors using the 325 nm laser.…”

Section: Discussionmentioning

confidence: 98%

Germanium Incorporation in Cu₂ZnSnS₄ and Formation of a Sn–Ge Gradient

Saini

Larsen

Sopiha

et al. 2019

Physica Status Solidi (a)

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Alloying of Cu2ZnSnS4 (CZTS) with Ge can potentially promote grain growth and suppress the formation of Sn‐related defects. Herein, a two‐step fabrication route based on compound co‐sputtering and sulfurization at a high temperature is used to prepare Ge‐incorporated CZTS (Cu2ZnGexSn1 − xS4 [CZGTS]). For Cu2ZnGeS4 (CZGS), films deposited using elemental Ge and binary GeS targets are compared. The recrystallization is shown to be promoted for the absorbers deposited using Ge target, possibly due to lower sulfur content in the precursor suppressing the formation of wurtzite‐like phases during sputtering. The grain growth and crystallinity in CZGTS are slightly improved for x = 0.2 but not for higher concentration of the incorporated Ge. Owing to the composition‐dependent electronic properties, compositionally graded CZGTS films may be beneficial for reducing recombination towards the back contact. Hence, herein, the successful formation of a steep concentration gradient with Ge and Sn is demonstrated by the deposition of a CZGS/CZTS precursor stack followed by sulfurization with varying time periods.

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Section: Discussionmentioning

confidence: 98%

Germanium Incorporation in Cu₂ZnSnS₄ and Formation of a Sn–Ge Gradient

Saini

Larsen

Sopiha

et al. 2019

Physica Status Solidi (a)

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“…In the case of films annealed in the S powder environment only ZnS secondary phase is observed, while in the case of H 2 S, the presence of SnS, ZnS and SnS 2 as secondary phases is observed. From this, it can be understood that formation of CZTS happens through reaction of binary sulphides which is given below [38][39][40]:…”

Section: Effect Of Sulphurization Environment On Czts Formationmentioning

confidence: 99%

Impact of sulphurization environment on formation of $$\hbox {Cu}_{2}\hbox {ZnSnS}_{4}$$ Cu 2 ZnSnS 4 films using electron beam evaporated stacked metallic precursors

2019

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The superiority of copper zinc tin sulphide (Cu 2 ZnSnS 4 ; CZTS) over the existing absorber layer materials is inevitable owing to its cheap, non-toxic and earth abundant constituents with high absorption coefficient value. In the present study, CZTS films are prepared by sulphurizing electron beam deposited precursors of glass/Cu/Zn/Sn/Cu and glass/Cu/Sn/Zn/Cu stacking sequences in two different environments i.e., elemental S powder and 5% H 2 S + N 2 gas at different ramping rates. The effect of sulphurization environment and sulphurization ramping rate on the formation of CZTS is investigated using X-ray diffraction and Raman spectroscopy. The morphology and composition of the films are analysed respectively using field emission gun scanning electron microscopy and energy dispersive X-ray spectroscopy. It is observed that films prepared in elemental S powder at a low ramping rate exhibit better crystallinity with less impurity phases. The presence of ZnS is observed in all the films, while the presence of SnS is observed in films prepared with H 2 S gas alone, thus concluding that sulphurization in the presence of elemental S powder at a low ramping rate is highly favourable for CZTS film formation. CZTS films with minor ZnS impurity with a bandgap of 1.48 eV is successfully fabricated by using a glass/Cu/Zn/Sn/Cu precursor stack.

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“…Composition: 5a) Malachite, 5b) silicon germanium hybrid nanoparticle (adapted with permission . Copyright 2014, Elsevier), and 5c) kesterite crystal (adapted with permission . Copyright 2015, Royal Society of Chemistry).…”

Section: Introductionmentioning

confidence: 99%

Multidimensional Particle Size Distributions and Their Application to Nonspherical Particle Systems in Two Dimensions

Frank

Wawra

Pflug

et al. 2019

Part & Part Syst Charact

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Particle science and technology evolve toward ever increasing complexity with respect to the multidimensional particle properties of size, shape, surface, internal structure, and composition. In this study, the theoretical background is elaborated for multidimensional particle size distributions (PSDs) by transferring the concepts known from 1D size distributions to anisotropic particles comprising at least two different length dimensions, e.g., nanorods and platelets. After introducing 2D PSDs, the calculation of differently weighted probability density functions including their interconversion is presented. This is necessary in order to compare data resulting from different measurement techniques which probe different physical properties and thus provide differently weighted PSDs. In addition, it is shown how 1D distributions with reduced content of information can be deduced from 2D PSDs. As a proof‐of‐concept and for illustration purposes, this approach is applied to a 2D Gaussian size distribution. Furthermore, a generalized scheme is suggested which outlines the conversion of number, surface, and volume weighted densities within the 2D space. The application of these methods to the more general n‐dimensional case is straightforward.

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A comprehensive study on the mechanism behind formation and depletion of Cu₂ZnSnS₄ (CZTS) phases

Cited by 38 publications

References 56 publications

Germanium Incorporation in Cu₂ZnSnS₄ and Formation of a Sn–Ge Gradient

Germanium Incorporation in Cu₂ZnSnS₄ and Formation of a Sn–Ge Gradient

Impact of sulphurization environment on formation of $$\hbox {Cu}_{2}\hbox {ZnSnS}_{4}$$ Cu 2 ZnSnS 4 films using electron beam evaporated stacked metallic precursors

Multidimensional Particle Size Distributions and Their Application to Nonspherical Particle Systems in Two Dimensions

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A comprehensive study on the mechanism behind formation and depletion of Cu2ZnSnS4 (CZTS) phases

Cited by 38 publications

References 56 publications

Germanium Incorporation in Cu2ZnSnS4 and Formation of a Sn–Ge Gradient

Germanium Incorporation in Cu2ZnSnS4 and Formation of a Sn–Ge Gradient

Impact of sulphurization environment on formation of $$\hbox {Cu}_{2}\hbox {ZnSnS}_{4}$$ Cu 2 ZnSnS 4 films using electron beam evaporated stacked metallic precursors

Multidimensional Particle Size Distributions and Their Application to Nonspherical Particle Systems in Two Dimensions

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A comprehensive study on the mechanism behind formation and depletion of Cu₂ZnSnS₄ (CZTS) phases

Germanium Incorporation in Cu₂ZnSnS₄ and Formation of a Sn–Ge Gradient

Germanium Incorporation in Cu₂ZnSnS₄ and Formation of a Sn–Ge Gradient