A comprehensive study on Co-doped CdS nanostructured films fit for optoelectronic applications

Trabelsi, Amira Ben Gouider; Chandekar, Kamlesh V.; Alkallas, Fatemah H.; Ashraf, I.M.; Hakami, Jabir; Shkir, Mohd.; AlFaify, S.

doi:10.1016/j.jmrt.2022.11.002

Cited by 22 publications

(12 citation statements)

References 83 publications

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“…This reduction in lattice parameters is attributed to the substitutional incorporation of smaller Co 2þ (with an ionic radius of 0.72 Å) at the Cd 2þ ion position (with an ionic radius of 0.92 Å). [4] This observation is different from the one reported by Trabelsi, et al where interstitial incorporation of Co 2þ in the CdS host lattice causes a shift of XRD peaks to lower diffraction angles and leads to the expansion of volume of the unit cell. [35] Kenath, et al [36] and Maity, et al [12] reported that doped Co in CdS appears as a new absorption peak, during UV-Vis absorption…”

Section: Resultscontrasting

confidence: 63%

“…[4] Generally, hexagonal CdS crystals tend to preferentially orient along the (002) plane due to its lower surface energy when compared to other planes. [4] In these films, the intensity of the (002) peak increases with rising Co concentration, up to 8 wt% (see Figure 1a), except for the 1 wt% film where the preferred growth direction aligns with the (101) plane. The ratio of intensities of I (101) /I (002) and I (002) /I (100) , as presented in Table 1, also confirms this observation, that 1 wt% Co-doped CdS thin films are oriented along (101) direction.…”

Section: Resultsmentioning

confidence: 99%

“…[2,10,31] Notably, the intensities of the (002) and (101) peaks exhibit significant variations with increasing Co doping concentration. [4] Generally, hexagonal CdS crystals tend to preferentially orient along the (002) plane due to its lower surface energy when compared to other planes. [4] In these films, the intensity of the (002) peak increases with rising Co concentration, up to 8 wt% (see Figure 1a), except for the 1 wt% film where the preferred growth direction aligns with the (101) plane.…”

Section: Resultsmentioning

confidence: 99%

“…based on its n-type conductivity, visible region band gap (≈2.4 eV), and lower excitonic binding energy of 15 meV. [1][2][3][4] CdS nanostructure-based photodetectors are gaining popularity due to their increased photosensitivity. [5][6][7][8] However, during the synthesis process, the creation of local non-stoichiometric conditions, characterized by the presence of point defects such as sulfur vacancies (V s ) and cadmium interstitials (Cd i ), occurs within the film.…”

mentioning

confidence: 99%

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Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

Halge,

Narwade,

Khanzode

et al. 2023

Adv Eng Mater

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A visible light photodetector is developed using cobalt (Co)‐doped cadmium sulfide (CdS) thin films that exhibits outstanding characteristics with a photocurrent of 284 μA, responsivity of 13.2 A W−1, an extraordinary external quantum efficiency (EQE) of 4550%, exceptional sensitivity (2.84 × 106%), and a rapid response time of 0.6 ms. These remarkable properties are most pronounced in 1 wt% Co‐doped CdS device and decrease with higher Co doping concentrations. This enhanced performance is attributed to the introduction of a defect energy band (DEB) near the CdS valence band, supported by UV‐Vis absorption spectra with a distinct feature at 744 nm. This DEB remains fully populated at room temperature and plays a vital role in responding to temperature variations. Our investigation reveals that 1 wt% Co‐doped CdS device exhibits significant (90%) thermal tolerance compared to pure CdS (10%) and higher Co doping concentrations (20%) in the temperature range of 27–110 °C. This improved thermal stability is attributed to the optimal Co doping concentration, striking a balance between thermal and photo‐excitation processes, thereby stabilizing the photocurrent. This research offers valuable insights into Co‐doped CdS thin films, promising robust and reliable photodetection devices, particularly suitable for applications with fluctuating temperatures.

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Section: Resultscontrasting

confidence: 63%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

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Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

Halge,

Narwade,

Khanzode

et al. 2023

Adv Eng Mater

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“…The optical band gap for the CMC/PVA/PEDOT:PSS and CMC/PVA/PEDOT:PSS/NiO nanocomposite samples can be calculated via Tuac's Eqs. [25][26][27].…”

Section: Uv-visible Absorbancementioning

confidence: 99%

The Influence of NiO Nanoparticles on Structural, Optical and Dielectric Properties of CMC/PVA/PEDOT:PSS Nanocomposites

Salim

Tarabiah

2023

J Inorg Organomet Polym

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The solution casting process was used to fabricate nanocomposite samples composed of carboxymethylcellulose (CMC), polyvinyl alcohol (PVA), poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and filled with varied concentrations of nickel oxide nanoparticles (NiO NPs). The effect of NiO nanoparticles on the structural, optical, and electrical properties of the pure CMC/PVA/PEDOT:PSS mixture was studied and discussed. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis revealed that the NiO NPs are cubic in phase and range in size from 10 to 55 nm. The XRD analysis of the incorporated films indicated that the NiO NPs crystallinity increased at expense of the CMC/PVA/PEDOT:PSS composites. Fourier Transform Infrared (FTIR) examination revealed the main absorption vibrational peaks of CMC, PVA, PEDOT:PSS, and Ni-O, whose intensities changed randomly after filling, revealing the intermolecular interaction between the nanocomposite components. The UV and visible range absorption spectra showed a sharp peak around 228 for the pure blend, which can be assigned to the π→π* transition. After being filled with NiO NPs, the nanocomposites produced displayed new peaks at 292 and 422 nm that steadily increased with increasing NiO NPs concentration. The optical energy gap (Eg) was computed, and it was discovered that when the NiO NPs content increased, the Eg decreased (from 4.88 to 4.06 eV). At room temperature and over a wide frequency range, between 10− 1 and 107 Hz, the samples’ impedance, AC conductivity, and dielectric qualities were examined. Increased NiO NPs content was seen to gradually enhance dielectric loss (up to 2255), and dielectric constant (up to 311). The AC conductivity of the filled samples is also enhanced and corresponds to Jonscher power law. By analysing impedance components of the Z*, the equivalent electrical circuit for each sample was determined. Because of the considerable improvement in optical and electrical properties, these composite films could compete for usage in optoelectronic applications.

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Facile synthesis and characterization of CdS thin films doped by yttrium atoms

Yılmaz¹,

Tomakin²,

Polat³

et al. 2023

Appl. Phys. A

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A comprehensive study on Co-doped CdS nanostructured films fit for optoelectronic applications

Cited by 22 publications

References 83 publications

Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

The Influence of NiO Nanoparticles on Structural, Optical and Dielectric Properties of CMC/PVA/PEDOT:PSS Nanocomposites

Facile synthesis and characterization of CdS thin films doped by yttrium atoms

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