A comprehensive process engineering on TDDB for direct polishing ultra-low k dielectric Cu interconnects at 40nm technology node and beyond

Lin, Wen-Chin; Tsai, T. C.; Hsu, H. K.; Tsao, W. C.; Chen, Willis; Cheng, Chien-Min; Hsu, Cheng-Liang; Liu, C. C.; Hsu, Chia-Wen; Lin, Jian-Yang; Huang, Chien Chung; Wu, J. Y.

doi:10.1109/irps.2011.5784470

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Low-k Types and Integrating Low-k Dielectrics1

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“…First, the material must possess thermomechanical properties that will be sufficiently robust against the expected thermomechanical stresses and strains from BEOL integration and packaging; i.e. Second, the material must not suffer any significant degradation in its fundamental properties (chemical/physical/materials, thermal, and electrical properties) during process and integration [127,[138][139][140][141][142][143]. Second, the material must not suffer any significant degradation in its fundamental properties (chemical/physical/materials, thermal, and electrical properties) during process and integration [127,[138][139][140][141][142][143].…”

Section: Low-k Types and Integrating Low-k Dielectricsmentioning

confidence: 99%